BCP69T3 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCP69T3

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.5

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 45

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of BCP69T3 transistor: SP0

BCP69T3 Equivalent Transistors - Cross-Reference Search

BCP69T3 PDF document for downloads:

4.1. bcp69t1rev2.pdf Size:71K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP69T1/D BCP69T1 PNP Silicon Motorola Preferred Device Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for PNP SILICON medium power surface mount applications. HIGH CURRENT • High Current: IC = –1.0 Amp TRANSISTOR • The SOT-223 Package can be soldered using wave or reflow. SURFACE MOUNT • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to 4 the die. • Available in 12 mm Tape and Reel COLLECTOR 2,4 1 Use BCP69T1 to order the 7 inch/1000 unit reel. 2 3 Use BCP69T3 to order the 13 inch/4000 unit reel. BASE • NPN Complement is BCP68 1 CASE 318E-04, STYLE 1 TO-261AA EMITTER

4.2. bcp69t1-d.pdf Size:96K _onsemi

BCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER • High Current: IC = -1.0 A PNP SILICON • The SOT-223 Package Can Be Soldered Using Wave or Reflow. HIGH CURRENT • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. TRANSISTOR The formed leads absorb thermal stress during soldering, eliminating SURFACE MOUNT the possibility of damage to the die. • NPN Complement is BCP68 COLLECTOR 2,4 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant BASE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit EMITTER 3 Collector-Emitter Voltage VCEO -20 Vdc MARKING Collector-Base Voltage VCBO -25 Vdc DIAGRAM

5.1. bcp69_3.pdf Size:50K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 20 V). 1 base 2, 4 collector APPLICATIONS 3 emitter • General purpose switching and amplification • Power applications such as audio output stages. handbook, halfpage 4 2, 4 DESCRIPTION PNP medium power transistor in a SOT223 plastic 1 package. NPN complement: BCP68. 3 1 2 3 Top view MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --32 V VCEO collector-emitter voltage open base --20 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --1A ICM peak coll

5.2. bcp69.pdf Size:95K _philips

BCP69 20 V, 1 A PNP medium power transistor Rev. 06 — 2 December 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package Package configuration NXP JEITA BCP69 SOT223 SC-73 medium power BCP69-16 BCP69-16/DG BCP69-16/IN BCP69-25 [1] /DG: halogen-free 1.2 Features High current Three current gain selections 1.4 W total power dissipation Medium power SMD plastic package 1.3 Applications Linear voltage regulators High-side switches Supply line switches MOSFET drivers Audio preamplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -20 V IC collector current - - -1 A ICM peak collector current single pulse; - - -2 A tp ? 1ms BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor Table 2. Quick reference d

5.3. bcp69.pdf Size:117K _fairchild_semi

January 2007 BCP69 PNP General Purpose Amplifier 4 • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. 3 • Sourced from Process 77. 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -20 V VCBO Collector-Base Voltage -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -1.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Value Units PD Total Device

5.4. bcp69.pdf Size:136K _siemens

PNP Silicon AF Transistor BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BCP 69 BCP 69 Q62702-C2130 B C E C SOT-223 BCP 69-10 BCP 69-10 Q62702-C2131 BCP 69-16 BCP 69-16 Q62702-C2132 BCP 69-25 BCP 69-25 Q62702-C2133 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V VCES 25 Collector-base voltage VCB0 25 Emitter-base voltage VEB0 5 Collector current IC 1A Peak collector current ICM 2 Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 124 ?C2) Ptot 1.5 W Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 72 K/W Junction - soldering point Rth JS ? 17 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ?

5.5. cbcp68_cbcp69.pdf Size:363K _central

CBCP68 NPN CBCP69 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION: SMALL SIGNAL SILICON The CENTRAL SEMICONDUCTOR CBCP68 and TRANSISTORS CBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Emitter Voltage VCES 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Peak Collector Current ICM 2.0 A Continuous Base Current IB 100 mA Peak Base Current IBM 200 mA Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ?JA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=25V 10 µA ICBO VCB=25V, TA=150°C 1.0 mA IEBO VEB=5.0V 10 µA

5.6. bcp69.pdf Size:43K _diodes

SOT223 PNP SILICON PLANAR BCP69 MEDIUM POWER TRANSISTOR ISSUE 3 – FEBRUARY 1996 T i C i II V T T 8 E C T I D T I B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V µ V V T ° i I µ V V II i V V I I i V I i T V V I V V V I V I V V i I V V T i I V V I V V T i i T I V V I i i I i µ D I ? i I i i T

5.7. bcp69-25.pdf Size:517K _infineon

BCP69-25 PNP Silicon AF Transistor • For general AF applications 4 3 • High collector current 2 1 • High current gain • Low collector-emitter saturation voltage • Complementary type: BCP68 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCP69-25 ...-25* 1=B 2=C 3=E 4=C - - SOT223 * Marking is the same as type-name Maximum Ratings Parameter Symbol Value Unit 20 V Collector-emitter voltage VCEO 25 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 5 Emitter-base voltage VEBO 1 A Collector current IC 2 Peak collector current, tp ? 10 ms ICM 100 mA Base current IB 200 Peak base current IBM 3 W Total power dissipation- Ptot TS ? 114 °C 150 °C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit K/W Junction - soldering point1) RthJS ? 12 1 2011-09-19 BCP69-25 Electrical Characteristics at TA = 25°C, unless otherwise s

5.8. bcp69.pdf Size:800K _secos

BCP69 PNP Transistor Elektronische Bauelemente Silicon Epitaxial Transistor RoHS Compliant Product SOT-223 Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO : -20V * IC : 1A Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 BCP69 E 0 10 2 6.30 6.70 Date Code I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 B C E 5 1.40 1.80 o MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage - 25 V VCEO - 20 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A W PD Total Power Dissipation 1.5 O Storage Temperature C TJ, Junction and -65~-150 Tstg o ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified C Typ. Parameter Symbol Min Max Uni Test Conditions Collector-Base Breakdown Voltage IC=-100µA, IE=0 B

5.9. bcp69.pdf Size:209K _wietron

BCP69 PNP Silicon Epitaxial Transistor COLLECTOR 2, 4 4 P b Lead(Pb)-Free 1.BASE 2.COLLECTOR BASE 1 3.EMITTER 1 2 4.COLLECTOR 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector to Base Voltage -25 V VCEO Collector to Emitter Voltage -20 V VEBO Collector to Base Voltage -5.0 V IC Collector Current A -1.0 Total Device Disspation TA=25°C PD 1.5 W Junction Temperature Tj +150 ?C -65 to +150 Storage Temperature Tstg ?C Device Marking BCP69 = BCP69 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Max Unit Collector-Base Breakdown Voltage BVCBO -25 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -20 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -5.0 - - V IE=-10µA, IC=0 Collector Cut-Off Current ICBO - - -10 µA VCB=-25V, IE=0 Emitter-Cut-Off Current IEBO - - -10 µA VEB=-5V, IC=0 WEITRON 1/4 14-Feb-06 http://www.weitron.com.tw BCP69 ELECTRICAL CHARACTE

See also transistors datasheet: BCP628A , BCP628B , BCP628C , BCP68 , BCP68T1 , BCP68T3 , BCP69 , BCP69T1 , BC547C , BCR08PN , BCR108 , BCR108S , BCR108W , BCR10PN , BCR112 , BCR116 , BCR116W .

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