BCR133 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCR133

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 130

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of BCR133 transistor: SOT23

BCR133 Equivalent Transistors - Cross-Reference Search

BCR133 PDF document for downloads:

1.1. bcr133w.pdf Size:34K _siemens

BCR 133W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10k?, R2=10k?) Type Marking Ordering Code Pin Configuration Package BCR 133W WCs Q62702-C2286 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 124°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 240 K/W Junction - soldering point RthJS ? 105 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 133W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 100 µA, IB = 0 50 - -

1.2. bcr133s.pdf Size:43K _siemens

BCR 133S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistors (R1=10k?, R2=10k?) Type Marking Ordering Code Pin Configuration Package BCR 133S WCs Q62702-C2376 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 115°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 275 K/W Junction - soldering point RthJS ? 140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 133S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Charact

1.3. bcr133.pdf Size:35K _siemens

BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10k?, R2=10k?) Type Marking Ordering Code Pin Configuration Package BCR 133 WCs Q62702-C2256 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 102°C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 350 K/W Junction - soldering point RthJS ? 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 133 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 100 µA, IB = 0 50 - - Coll

See also transistors datasheet: BCR108S , BCR108W , BCR10PN , BCR112 , BCR116 , BCR116W , BCR119 , BCR119S , BD139 , BCR133S , BCR133W , BCR135 , BCR135S , BCR135W , BCR141 , BCR141S , BCR141W .

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