BCV61B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCV61B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 2.5

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of BCV61B transistor: SOT143

BCV61B Equivalent Transistors - Cross-Reference Search

BCV61B PDF document for downloads:

5.1. bcv61.pdf Size:138K _philips

BCV61 NPN general-purpose double transistors Rev. 04 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEITA BCV61 SOT143B - BCV62 BCV61A BCV62A BCV61B BCV62B BCV61C BCV62C 1.2 Features Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs 1.3 Applications Applications with working point independent of temperature Current mirrors 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 collector TR2; 4 3 4 3 base TR1 and TR2 2 collector TR1 TR2 TR1 3emitter TR1 4emitter TR2 1 2 1 2 006aaa842 BCV61 NXP Semiconductors NPN general-purpose double transistors 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BCV61 - plastic surface-mounted package; 4 lea

5.2. bcv61_3.pdf Size:56K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV61 NPN general purpose double transistor 1999 Apr 08 Product specification Supersedes data of 1997 Jun 16 Philips Semiconductors Product specification NPN general purpose double transistor BCV61 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 3 emitter TR1 APPLICATIONS 4 emitter TR2 • For use in applications where the working point must be independent of temperature • Current mirrors. handbook, halfpage 4 3 21 DESCRIPTION NPN double transistor in a SOT143B plastic package. TR1 TR2 PNP complement: BCV62. 34 1 2 MARKING Top view MAM293 TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE BCV61 1Mp BCV61B 1Kp Fig.1 Simplified outline (SOT143B) and symbol. BCV61A 1Jp BCV61C 1Lp LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V

5.3. bcv61.pdf Size:95K _siemens

NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror Good thermal coupling and VBE matching High current gain Low emitter-saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BCV 61 A 1Js Q62702-C2155 SOT-143 BCV 61 B 1Ks Q62702-C2156 BCV 61 C 1Ls Q62702-C2157 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V (transistor T1) Collector-base voltage (open emitter) VCB0 30 (transistor T1) Emitter-base voltage VEBS 6 Collector current IC 100 mA Collector peak current ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS ? 99 ?C2) Ptot 300 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 240 K/W Junction - soldering point Rth JS ? 170 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5

5.4. bcv61.pdf Size:175K _infineon

BCV61 NPN Silicon Double Transistor • To be used as a current mirror 3 • Good thermal coupling and VBE matching 2 4 • High current gain 1 • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration Package BCV61 1Js 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage VCEO (transistor T1) 30 Collector-base voltage (open emitter) VCBO (transistor T1) 6 Emitter-base voltage VEBS 100 mA DC collector current IC 200 Peak collector current ICM 200 Base peak current (transistor T1) IBM 300 mW Total power dissipation, TS = 99 °C Ptot 150 °C Junction temperature Tj Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request 2007-08-09 1 B

See also transistors datasheet: BCV46 , BCV47 , BCV48 , BCV49 , BCV61 , BCV61 , BCV61A , BCV61A , 9012 , BCV61B , BCV61C , BCV61C , BCV62 , BCV62 , BCV62A , BCV62A , BCV62B .

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