BCW60B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCW60B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 32

Maximum collector-emitter voltage |Uce|, V: 32

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 125

Collector capacitance (Cc), pF: 4.5

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of BCW60B transistor: TO236

BCW60B Equivalent Transistors - Cross-Reference Search

BCW60B PDF document for downloads:

5.1. bcw60alt.pdf Size:425K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW60ALT1/D BCW60ALT1 General Purpose Transistors BCW60BLT1 NPN Silicon COLLECTOR BCW60DLT1 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 32 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Ma

5.2. bcw60_3.pdf Size:48K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification. handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) Top view MAM255 BCW60B AB? BCW60C AC? BCW60D AD? Fig.1 Simplified outline (SOT23) and symbol. Note 1. ? = p : Made in Hong Kong. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 32 V VCEO collector-emitter voltage open base

5.3. bcw60.pdf Size:120K _philips

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BCW60 series NPN general purpose transistors Product data sheet 1999 Apr 22 Supersedes data of 1997 Mar 10 NXP Semiconductors Product data sheet NPN general purpose transistors BCW60 series FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification. DESCRIPTION handbook, halfpage 3 3 NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) Top view MAM255 BCW60B AB? BCW60C AC? BCW60D AD? Fig.1 Simplified outline (SOT23) and symbol. Note 1. ? = p : Made in Hong Kong. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 32 V VCEO collector-emitter voltage open base - 32 V

5.4. bcw60a_b_c_d.pdf Size:76K _fairchild_semi

BCW60A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 32 V BVEBO Emitter-Base Breakdown Voltage IE=1µA, IC=0 5 V ICES Collector Cut-off Current VCE=32V, VBE=0 20 nA IEBO Emitter Cut-off Current VEB=4V, IC=0 20 nA hFE DC Current Gain : BCW60B VCE=5V, IC=10µA 20 : BCW60C 40 : BCW60D 100 : BCW60A VCE=5V, IC=2mA 120 220 : BCW60B 180 310 : BCW60C 250 460 : BCW60D 380 630 : B

5.5. bcw60_bcx70.pdf Size:282K _siemens

NPN Silicon AF Transistors BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 60 A AAs Q62702-C1517 B E C SOT-23 BCW 60 B ABs Q62702-C1497 BCW 60 C ACs Q62702-C1476 BCW 60 D ADs Q62702-C1477 BCW 60 FF AFs Q62702-C1529 BCW 60 FN ANs Q62702-C1567 BCX 70 G AGs Q62702-C1539 BCX 70 H AHs Q62702-C1481 BCX 70 J AJs Q62702-C1552 BCX 70 K AKs Q62702-C1571 1) For detailed information see chapter Package Outlines. 5.91 Semiconductor Group 1 BCW 60 BCX 70 Maximum Ratings Parameter Symbol Values Unit BCW 60 BCW 60 FF BCX 70 Collector-emitter voltage VCE0 32 32 45 V Collector-base voltage VCB0 32 32 45 Emitter-base voltage VEB0 5 Collector current IC 100 mA Peak collector current ICM 200 Peak base current IBM 200 Total power dissipation, TS

See also transistors datasheet: BCW58A , BCW58B , BCW59 , BCW59A , BCW59B , BCW60 , BCW60A , BCW60ALT1 , 9013 , BCW60BLT1 , BCW60C , BCW60CLT1 , BCW60D , BCW60DLT1 , BCW60FF , BCW60FN , BCW60RA .

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