BCW68 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCW68

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BCW68 transistor: SOT23

BCW68 Equivalent Transistors - Cross-Reference Search

BCW68 PDF document for downloads:

1.1. bcw68glt.pdf Size:82K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW68GLT1/D General Purpose Transistor BCW68GLT1 PNP Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER MAXIMUM RATINGS CASE 318�08, STYLE 6 Rating Symbol Value Unit SOT�23 (TO�236AB) Collector�Emitter Voltage VCEO �45 Vdc Collector�Base Voltage VCBO �60 Vdc Emitter�Base Voltage VEBO �5.0 Vdc Collector Current � Continuous IC �800 mAdc DEVICE MARKING BCW68GLT1 = DH THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) PD 225 mW TA = 25�C Derate above 25�C 1.8 mW/�C Thermal Resistance, Junction to Ambient R?JA 556 �C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) TA = 25�C Derate above 25�C 2.4 mW/�C Thermal Resistance, Junction to Ambient R?JA 417 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector�Emit

1.2. bcw68g.pdf Size:230K _fairchild_semi

BCW68G C E SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V 3 VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg � *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25�C unless otherwise noted Symbol Characterist

1.3. bcw67_bcw68.pdf Size:134K _siemens

PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 67 A DAs Q62702-C1560 B E C SOT-23 BCW 67 B DBs Q62702-C1480 BCW 67 C DCs Q62702-C1681 BCW 68 F DFs Q62702-C1893 BCW 68 G DGs Q62702-C1322 BCW 68 H DHs Q62702-C1555 1) For detailed information see chapter Package Outlines. 5.91 Semiconductor Group 1 BCW 67 BCW 68 Maximum Ratings Parameter Symbol Values Unit BCW 67 BCW 68 Collector-emitter voltage VCE0 32 45 V Collector-base voltage VCB0 45 60 Emitter-base voltage VEB0 55 Collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 79 ?C Ptot 330 mW Junction temperature Tj 150 ?C Storage temperature range Tstg � 65 � + 150 Thermal Resistance Junction - ambient1) Rth JA ? 285 K

1.4. bcw67_bcw68.pdf Size:53K _diodes

SOT23 PNP SILICON PLANAR BCW67 MEDIUM POWER TRANSISTORS BCW68 ISSUE 4 - JUNE 1996 T I D T I D . D E C D 8 D 8 T 8 D 8 T B 8 D 8 T T SOT23 8 � ABSOLUTE MAXIMUM RATINGS. T 8 IT � II i V I V V II i V I V V i V I V V I I i II I 8 I V V Di i i T � V i T T T � V V V V V V V V BCW67 BCW68 ELECTRICAL CHARACTERISTICS (at Tamb = 25�C unless otherwise stated). T I T IT DITI II i V V I V I 8 I V I � 8 I � i V I V V I � II i I V V � � V V T 8 V V � V V T � i I V V II i i V I V V I I V I I i i V I V V I I i I V V 8 I V V I V V T I V V 8 I V V I V V 8 I V V 8 I V V I V V T i i I V V T II i 8 V V i i 8 V V i i I V V ?, ? i i i T Ti I T Ti I I ? i i iI I i i I i i I i � D I ?

1.5. bcw68glt1.pdf Size:108K _onsemi

BCW68GLT1G General Purpose Transistor PNP Silicon Features � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc 2 EMITTER Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc 3 Stresses exceeding Maximum Ratings may damage the device. Maximum SOT-23 Ratings are stress ratings only. Functional operation above the CASE 318 1 Recommended Operating Conditions is not implied. Extended exposure to STYLE 6 stresses above the Recommended Operating Conditions may affect device 2 reliability. THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board PD 225 mW (Note 1) TA = 25�C DG MG Derate above 25�C 1.8 mW/�C G Thermal Resistance, RqJA 556 �C/W Junction-to-Ambient DG = Specific Device Code Total Device Dissipat

1.6. bcw68.pdf Size:216K _secos

BCW68 PNP Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES L 3 3 ? Complementary to BCW66. Top View C B COLLECTOR 1 1 2 3 2 K E D 1 H J MARKING: F G BASE BCW68F:DF Millimeter Millimeter BCW68G:DG REF. REF. Min. Max. Min. Max. 2 BCW68H:DH A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 EMITTER C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current - Continuous IC -0.8 A Collector Power Dissipation PC 0.33 W Junction & Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-Base Breakdown Vo

1.7. bcw68.pdf Size:66K _kec

SEMICONDUCTOR BCW68 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 P P VCBO -60 V Collector-Base Voltage M 0.20 MIN N 1.00+0.20/-0.10 VCEO -45 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -5 V M IC Collector Current -800 mA 1. EMITTER IE Emitter Current 800 mA 2. BASE 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * : Package Mounted On 99.9% Alumina 10 8 0.6mm. MARK SPEC Marking TYPE MARK hFE Rank Lot No. BCW68F DF Type Name BCW68G DG 1998. 6. 15 Revision No : 1 1/2 D A G H N C J K BCW68 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.

See also transistors datasheet: BCW66RH , BCW67 , BCW67A , BCW67B , BCW67C , BCW67RA , BCW67RB , BCW67RC , BC517 , BCW68F , BCW68G , BCW68H , BCW68RF , BCW68RG , BCW68RH , BCW69 , BCW69LT1 .

Keywords