| |
BCX70RH
Transistor Datasheet. Parameters and Characteristics. Type Designator: BCX70RH
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.31
Maximum collector-base voltage |Ucb|, V: 45
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.2
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 125
Collector capacitance (Cc), pF: 4.5
Forward current transfer ratio (hFE), min: 180
Noise Figure, dB: - Package of BCX70RH
transistor: SOT23
BCX70RH
Equivalent Transistors - Cross-Reference Search BCX70RH
PDF document for downloads:
5.1. bcx70glt_bcx70jlt_bcx70klt.pdf  Size:427K _motorola  |
 | MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BCX70GLT1/D
BCX70GLT1
General Purpose Transistors
NPN Silicon
BCX70JLT1
COLLECTOR
3
BCX70KLT1
1
BASE
2
3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol Value Unit
2
CollectorEmitter Voltage VCEO 45 Vdc
CollectorBase Voltage VCBO 45 Vdc
CASE 31808, STYLE 6
SOT23 (TO236AB)
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board(1) PD 225 mW
TA = 25C
Derate above 25C 1.8 mW/C
Thermal Resistance, Junction to Ambient RqJA 556 C/W
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25C
Derate above 25C 2.4 mW/C
Thermal Resistance, Junction to Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min |
5.2. bcx70_3.pdf Size:48K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCX70 series
NPN general purpose transistors
1999 Apr 15
Product specification
Supersedes data of 1997 Mar 14
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
Low voltage (max. 45 V).
1 base
2 emitter
APPLICATIONS
3 collector
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
handbook, halfpage
3
PNP complements: BCX71 series.
3
MARKING
1
TYPE NUMBER MARKING CODE(1)
2
BCX70G AG? 1 2
BCX70H AH?
Top view
MAM255
BCX70J AJ?
BCX70K AK?
Note
Fig.1 Simplified outline (SOT23) and symbol.
1. ? = p : Made in Hong Kong.
? = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 45 V
VCEO collector-emitter voltage o |
5.3. bcx70.pdf Size:125K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
BCX70 series
NPN general purpose transistors
Product data sheet 2004 Jan 16
Supersedes data of 1999 Apr 15
NXP Semiconductors Product data sheet
NPN general purpose transistors BCX70 series
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
Low voltage (max. 45 V).
1 base
2 emitter
APPLICATIONS
3 collector
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
handbook, halfpage
3
3
MARKING
1
TYPE NUMBER MARKING CODE(1)
BCX70G AG*
2
1 2
BCX70H AH*
BCX70J AJ*
Top view
MAM255
BCX70K AK*
Note
1. * = p : Made in Hong Kong.
Fig.1 Simplified outline (SOT23) and symbol.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME DESCRIPTION VERSION
BCX70G - plastic surface mounted package; 3 leads SOT23
BCX70H
BCX70J
BCX70K
2004 Jan 16 2
NXP Semiconductors Product data sheet
N |
5.4. bcx70j.pdf Size:75K _fairchild_semi  |
 | BCX70J
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 200 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperature -55 ~ 150 C
Refer to KST3904 for graphs
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC=2.0mA, IB=0 45 V
BVEBO Emitter-Base Breakdown Voltage IE=1.0A, IC=0 5 V
ICES Collector Cut-off Current VCE=32V, VBE=0 20 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 20 nA
hFE DC Current Gain VCE=5V, IC=10A 40
VCE=5V, IC=2.0mA 250 460
VCE=1V, IC=50mA 90
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.25mA 0.35 V
IC=50mA, IB=1.25mA 0.55 V
VBE (sat) Base-Emitter Satu |
5.5. bcx70k.pdf Size:75K _fairchild_semi  |
 | BCX70K
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 200 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperature -55 ~ 150 C
Refer to KST3904 for graphs
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC=2.0mA, IB=0 45 V
BVEBO Emitter-Base Breakdown Voltage IE=1.0A, IC=0 5 V
ICES Collector Cut-off Current VCE=32V, VBE=0 20 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 20 nA
hFE DC Current Gain VCE=5V, IC=10A 100
VCE=5V, IC=2.0mA 380 630
VCE=1V, IC=50mA 100
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.25mA 0.35 V
IC=50mA, IB=1.25mA 0.55 V
VBE (sat) Base-Emitter Sa |
5.6. bcx70g.pdf Size:75K _fairchild_semi  |
 | BCX70G
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 200 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperature -55 ~ 150 C
Refer to KST5088 for graphs
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 45 V
BVEBO Emitter-Base Breakdown Voltage IE=1A, IC=0 5 V
ICES Collector Cut-off Current VCE=32V, VBE=0 20 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 20 nA
hFE DC Current Gain VCE=5V, IC=2mA 120 220
VCE=1V, IC=50mA 60
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.25mA 0.35 V
IC=50mA, IB=1.25mA 0.55 V
VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB |
5.7. bcx70h.pdf Size:75K _fairchild_semi  |
 | BCX70H
3
General Purpose Transistor
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 200 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperature -55 ~ 150 C
Refer to KST3904 for graphs
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC=2.0mA, IB=0 45 V
BVEBO Emitter-Base Breakdown Voltage IE=1.0A, IC=0 5 V
ICES Collector Cut-off Current VCE=32V, VBE=0 20 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 20 nA
hFE DC Current Gain VCE=5V, IC=10A 20
VCE=5V, IC=2.0mA 180 310
VCE=1V, IC=50mA 70
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.25mA 0.35 V
IC=50mA, IB=1.25mA 0.55 V
VBE (sat) Base-Emitter Satu |
5.8. bcx70j.pdf Size:19K _samsung  |
 | BCX70J NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 200 mA
Collector Dissipation PC 350 mW
Storage Temperature TSTG 150
Refer to KS3904 for graphs
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T =25 )
A
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage BVCEO IC=2.0mA, IB=0 45 V
Emitter-Base Breakdown Voltage BVEBO IE=1.0 , IC=0 5 V
Collector Cut-off Current ICES VCE=32V, VBE=0 20 nA
Emitter Cut-off Current IEBO VEB=4V, IC=0 20 nA
DC Current Gain hFE VCE=5V, IC=10 40
VCE=5V, IC=2.0mA 250 460
VCE=1V, IC=50mA 90
IC=10mA, IB=0.25mA 0.35
Collector-Emitter Saturation Voltage VCE (sat) V
IC=50mA, IB=1.25mA
0.55
V
IC=10mA, IB=0.25mA
0.85
V
Base-Emitter Saturation Voltage VBE (sat) 0.6
IC=50mA, |
5.9. bcx70k.pdf Size:20K _samsung  |
 | BCX70K NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Refer to KS3904 for graphs
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 200 mA
Collector Dissipation PC 350 mW
Storage Temperature TSTG 150
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T =25 )
A
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage BVCEO IC=2.0mA, IB=0 45 V
Emitter-Base Breakdown Voltage BVEBO IE=1.0 , IC=0 5 V
Collector Cut-off Current ICES VCE=32V, VBE=0 20 nA
Emitter Cut-off Current IEBO VEB=4V, IC=0
20 nA
DC Current Gain hFE VCE=5V, IC=10 100
VCE=5V, IC=2.0mA
380 630
VCE=1V, IC=50mA
100
IC=10mA, IB=0.25mA
Collector-Emitter Saturation Voltage VCE (sat) 0.35
V
IC=50mA, IB=1.25mA
0.55 V
IC=10mA, IB=0.25mA
Base-Emitter Saturation Voltage VBE (sat)
0.85 V
0.6
IC= |
5.10. bcx70g.pdf Size:20K _samsung  |
 | BCX70G NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 200 mA
Collector Dissipation PC 350 mW
Storage Temperature TSTG 150
Refer to KS5088 for graphs
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T =25 )
A
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 45 V
Emitter-Base Breakdown Voltage BVEBO IE=1 , IC=0 5 V
Collector Cut-off Current ICES VCE=32V, VBE=0 20 nA
Emitter Cut-off Current IEBO VEB=4V, IC=0 20 nA
DC Current Gain hFE VCE=5V, IC=2mA 120 220
VCE=1V, IC=50mA
60
Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=0.25mA 0.35
V
IC=50mA, IB=1.25mA
0.55
V
Base-Emitter Saturation Voltage VBE (sat) IC=10mA, IB=0.25mA
0.6 0.85 V
IC=50mA, IB=1.25mA
0.7 1.05 V
B |
5.11. bcx70h.pdf Size:20K _samsung  |
 | BCX70H NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 200 mA
Collector Dissipation PC 350 mW
Storage Temperature TSTG 150
Refer to KS3904 for graphs
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T =25 )
A
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage BVCEO IC=2.0mA, IB=0 45 V
Emitter-Base Breakdown Voltage BVEBO IE=1.0 , IC=0 5 V
Collector Cut-off Current ICES VCE=32V, VBE=0 20 nA
Emitter Cut-off Current IEBO VEB=4V, IC=0 20 nA
DC Current Gain hFE VCE=5V, IC=10 120
VCE=5V, IC=2.0mA 180 310
VCE=1V, IC=50mA
70
IC=10mA, IB=0.25mA 0.35
Collector-Emitter Saturation Voltage VCE (sat) V
IC=50mA, IB=1.25mA
0.55
V
IC=10mA, IB=0.25mA
0.85
Base-Emitter Saturation Voltage VBE (sat) V
0.6
IC=50m |
5.12. bcw60_bcx70.pdf Size:282K _siemens  |
 | NPN Silicon AF Transistors BCW 60
BCX 70
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW 61, BCX 71 (PNP)
Type Marking Ordering Code Pin Configuration Package1)
(tape and reel) 1 2 3
BCW 60 A AAs Q62702-C1517 B E C SOT-23
BCW 60 B ABs Q62702-C1497
BCW 60 C ACs Q62702-C1476
BCW 60 D ADs Q62702-C1477
BCW 60 FF AFs Q62702-C1529
BCW 60 FN ANs Q62702-C1567
BCX 70 G AGs Q62702-C1539
BCX 70 H AHs Q62702-C1481
BCX 70 J AJs Q62702-C1552
BCX 70 K AKs Q62702-C1571
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group 1
BCW 60
BCX 70
Maximum Ratings
Parameter Symbol Values Unit
BCW 60 BCW 60 FF BCX 70
Collector-emitter voltage VCE0 32 32 45 V
Collector-base voltage VCB0 32 32 45
Emitter-base voltage VEB0 5
Collector current IC 100 mA
Peak collector current ICM 200
Peak base current IBM 200
Total power dissipation, TS |
5.13. bcx70j_k.pdf Size:985K _rohm  |
 | NPN small signal transistor
BCX70J, K
?Features ?Dimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications.
BCX70J,K
2) Complements the BCX71.
2.9 0.95
0.4
0.45
(3)
?Packaging specifications
(2) (1)
Package Taping
0.95 0.95
0.15
Type Code T116
1.9
Basic ordering unit (pieces) 3000
(1)Emitter
Each lead has same dimensions
(2)Base
BCX70J, K
Abbreviated symbol : GAJ (BCX70J)
(3)Collector
GAK (BCX70K)
?Absolute maximum ratings (Ta=25?C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO 45 V
Collector-emitter voltage VCEO 45 V
Emitter-base voltage VEBO 5 V
Collector current IC
0.2 A
0.2 W
Collector power dissipation PC
0.35 W
?
Junction temperature Tj 150 C
Storage temperature Tstg -55 to 150 C
Mounted on a 7?5?0.6 mm CERAMIC SUBSTRATE
?
?Electrical characteristics (Ta=25?C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage BVCEO 45 - - V IC= 2mA
Emitter-base breakdown voltage BV |
5.14. bcx70j.pdf Size:440K _secos  |
 | BCX70J
NPN Silicon
Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
L
? Low Current 3
3
Top View
? Low Voltage C B
1
1 2
Collector
2
K E
??
D
MARKING : AJ
H J
F G
??
Base
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 2.70 3.04 G - 0.18
??
B 2.10 2.80 H 0.40 0.60
Emitter
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector - Base Voltage VCBO 45 V
Collector - Emitter Voltage VCEO 45 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 200 mA
Collector Power Dissapation PC 250 mW
Junction, Storage Temperature TJ, TSTG 150, -55~150 ?
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Collector-Base Breakdown Volta |
5.15. bcx70k.pdf Size:467K _secos  |
 | BCX70K
NPN Silicon
Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
L
? Low Current 3
3
Top View
? Low Voltage C B
1
1 2
Collector
2
K E
??
D
MARKING : AK
H J
F G
??
Base
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 2.70 3.04 G - 0.18
??
B 2.10 2.80 H 0.40 0.60
Emitter
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector - Base Voltage VCBO 45 V
Collector - Emitter Voltage VCEO 45 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 200 mA
Collector Power Dissapation PC 250 mW
Junction, Storage Temperature TJ, TSTG 150, -55~150 ?
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Collector-Base Breakdown Volta |
5.16. bcx70j.pdf Size:1100K _htsemi  |
 | BCX7 0J,K
TRANSISTOR (NPN)
SOT-23
FEATURES
Low current
Low voltage
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : BCX70J:AJ, BCX70K:AK
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 200 mA
PC Collector Power Dissipation 250 mW
Tj Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10?A,IE=0 45 V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=1?A,IC=0 5 V
Collector cut-off current ICES VCE=45V,VBE=0 20 nA
hFE1 VCE=5V,IC=10?A 30
DC current gain BCX70J hFE2 VCE=5V,IC=2mA 250 460
hFE3 VCE=1V,IC=50mA 90
hFE1 VCE=5V,IC=10?A 100
DC current gain BCX70K hFE2 VCE=5V |
5.17. bcx70j-k.pdf Size:400K _lge  |
 | BCX70J,K
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low current
Low voltage
Dimensions in inches and (millimeters)
MARKING : BCX70J:AJ, BCX70K:AK
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 200 mA
PC Collector Power Dissipation 250 mW
Tj Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10?A,IE=0 45 V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=1?A,IC=0 5 V
Collector cut-off current ICES VCE=45V,VBE=0 20 nA
hFE1 VCE=5V,IC=10?A 30
DC current gain BCX70J hFE2 VCE=5V,IC=2mA 250 460
hFE3 VCE=1V,IC=50mA 90
hFE1 VCE=5V,IC=10? |
See also transistors datasheet: BCX70G
, BCX70GLT1
, BCX70H
, BCX70J
, BCX70JLT1
, BCX70K
, BCX70KLT1
, BCX70RG
, BC557
, BCX70RJ
, BCX70RK
, BCX71
, BCX71G
, BCX71H
, BCX71J
, BCX71K
, BCX71RG
. Keywords| BCX70RH
Datasheet | BCX70RH
Datenblatt | BCX70RH
RoHS | BCX70RH
Distributor | | BCX70RH
Application Notes | BCX70RH
Component | BCX70RH
Circuit | BCX70RH
Schematic | | BCX70RH
Equivalent | BCX70RH
Cross Reference | BCX70RH
Data Sheet | BCX70RH
Fiche Technique |
|
