BCX79VII Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCX79VII

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.45

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 4.5

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of BCX79VII transistor: TO92

BCX79VII Equivalent Transistors - Cross-Reference Search

BCX79VII PDF document for downloads:

5.1. bcx79.pdf Size:31K _fairchild_semi

BCX79 E TO-92 B C PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units BCX79 PD Total Device Dissipation 625 m

See also transistors datasheet: BCX78VII , BCX78X , BCX79 , BCX79-10 , BCX79-7 , BCX79-8 , BCX79-9 , BCX79IX , MJE13003 , BCX79X , BCX80 , BCX81 , BCX82 , BCX83 , BCX84 , BCX85 , BCX86 .

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