BCY58QF Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCY58QF

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1.55

Maximum collector-base voltage |Ucb|, V: 32

Maximum collector-emitter voltage |Uce|, V: 32

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 125

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of BCY58QF transistor: LCC3

BCY58QF Equivalent Transistors - Cross-Reference Search

BCY58QF PDF document for downloads:

5.1. bcy58_bcy59_cnv_2.pdf Size:50K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors 1997 Jun 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Switching and amplification. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. 2 PNP complements: BCY78 and BCY79. 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BCY58 - - 32 V BCY59 - - 45 V VCEO collector-emitter voltage open base BCY58 - - 32 V BCY59 - - 45 V IC collector current (DC) - - 100 mA Ptot total power dissipation Tamb ? 45 °C - - 340 mW Tcase ? 45 °C - - 1 W

5.2. bcy58.pdf Size:99K _st

BCY58 BCY59 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The com- plementary PNP types are respectively the BCY78 and BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BCY58 BCY59 VCES Collector-emitter Voltage (VBE =0) 32 45 V VCEO Collector-emitter Voltage (IB = 0) 32 45 V VEBO Emitter-base Voltage (IC =0) 7 V IC Collector Current 200 mA IB Base Current 50 mA Pto t Total Power Dissipation at T ? 25 °C 0.39 mW amb at Tcase ? 45 °C 1 W Tstg, Tj Storage and Junction Temperature – 65 to 200 °C January 1989 1/6 BCY58-BCY59 THERMAL DATA Rth j-case Thermal Resistance Junction-case Max 150 °C/W Rth j-amb Thermal Resistance Junction-ambient Max 450 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Symbol Parameter Test Co

See also transistors datasheet: BCY58B , BCY58BP , BCY58C , BCY58CP , BCY58CSM , BCY58D , BCY58DP , BCY58IX , 2N222 , BCY58VII , BCY59 , BCY59-10 , BCY59-7 , BCY59-8 , BCY59-9 , BCY59A , BCY59AP .

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