BCY89 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCY89

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BCY89 transistor: TO71

BCY89 Equivalent Transistors - Cross-Reference Search

BCY89 PDF document for downloads:

1.1. bcy87_bcy88_bcy89_cnv_2.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D126 BCY87; BCY88; BCY89 NPN general purpose transistors 1997 Jun 20 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 FEATURES PINNING • Low current (max. 30 mA) PIN(1) DESCRIPTION • Low voltage (max. 45 V). 1 emitter TR1 2 emitter TR2 APPLICATIONS 3 collector TR2 • Differential amplifier applications in general industrial 4 basis TR2 service e.g. instrumentation and control 5 basis TR1 • The BCY87 and BCY88 are intended for use in 6 collector TR1 pre-stages of differential amplifiers where low offset, low Note drift and low noise are of prime importance 1. All leads insulated from the case. • The BCY89 is intended for use in second stages of differential amplifiers, long-tailed pairs and more general applications. handbook, halfpage 6 4 2 DESCRIPTION 1 2 Matched dual NP

See also transistors datasheet: BCY85A , BCY85B , BCY86 , BCY86A , BCY86B , BCY86C , BCY87 , BCY88 , 2N222 , BCY90 , BCY90B , BCY91 , BCY91B , BCY92 , BCY92B , BCY93 , BCY93B .

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