BD111 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD111

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 15

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BD111 transistor: TO3

BD111 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: BD109 , BD109-10 , BD109-16 , BD109-6 , BD109A , BD109B , BD109C , BD109D , TIP42C , BD111A , BD112 , BD113 , BD115 , BD116 , BD117 , BD118 , BD119 .

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