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BD135-16 Transistor (IC) Datasheet. Cross Reference Search. BD135-16 Equivalent

Type Designator: BD135-16

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 12

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BD135-16 transistor: TO126

BD135-16 Transistor Equivalent Substitute - Cross-Reference Search

BD135-16 PDF:

3.1. bd135-137-139.pdf Size:191K _lge

BD135-16
BD135-16

BD135/BD137/BD139(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(1.5A) Low Voltage(80V) 2.500 7.400 Dimensions in inches and (millimeters) 2.900 1.100 MAXIMUM RATINGS (TA=25? unless otherwise noted ) 7.800 1.500 Va3.900 lue 3.000 Symbol Parameter 4.100 Units 3.200 BD135 BD137 BD139 10.600 0.000 11.000 0.300

4.1. bd135-bd137-bd139.pdf Size:80K _secos

BD135-16
BD135-16

BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE (1) A Product-Rank BD135-6 BD135-10 BD135-16 B E F Product-Rank BD137-6

5.1. bd135_bd137_bd139.pdf Size:100K _motorola

BD135-16
BD135-16

Order this document MOTOROLA by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 Plastic Medium Power Silicon BD139 NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc NPN SILICON BD 135, 137, 139 are complementary with BD 136,

5.2. bd135_bd137_bd139_3.pdf Size:49K _philips

BD135-16
BD135-16

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal pa

5.3. bd135_bd139.pdf Size:74K _st

BD135-16
BD135-16

BD135 BD139 NPN SILICON TRANSISTORS Type Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 1 2 STMicroelectronics PREFERRED 3 SALESTYPES SOT-32 DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complem

5.4. bd135_bd137_bd139.pdf Size:44K _st

BD135-16
BD135-16

BD135 BD137/BD139 NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are the BD136 1 2 BD138 and BD140. 3 SOT-32 INTERNAL SCHEMATIC DI

5.5. bd135_bd136_bd139_bd140.pdf Size:155K _st

BD135-16
BD135-16

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are

5.6. bd135_bd137_bd139.pdf Size:41K _fairchild_semi

BD135-16
BD135-16

BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD135 45 V : BD137 60 V : BD139 80 V VCEO Collector-Emitter Voltage : BD135 45 V

5.7. bd135_bd137_bd139.pdf Size:51K _samsung

BD135-16
BD135-16

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Base E

5.8. bd135_bd137_bd139.pdf Size:246K _cdil

BD135-16
BD135-16

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD135 BD137 BD139 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

5.9. bd135.pdf Size:64K _kec

BD135-16
BD135-16

SEMICONDUCTOR BD135 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E High Current. (Max. : 1.5A) F Low Voltage (Max. : 45V) DC Current Gain : hFE=40Min. @IC=0.15A G Complementary to BD136. H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING

5.10. bd135_bd137_bd139.pdf Size:117K _inchange_semiconductor

BD135-16
BD135-16

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD136/138/140 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD135 BD137 BD139 Ў¤ Absolute maximum ratings (Ta=2

5.11. bd135_bd137_bd139.pdf Size:329K _wietron

BD135-16
BD135-16

BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol BD135 BD137 BD139 Unit VCBO 45 60 80 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 1.5 A PD 1.25 W Power Disspation Tj 150 ?C Junctio

5.12. stbd135t_stbd137t_stbd139t.pdf Size:454K _semtech

BD135-16
BD135-16

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139T Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 KΩ) VCER 45 60 100 V Collector Base Vo

See also transistors datasheet: BD130Y , BD131 , BD131A , BD132 , BD132A , BD133 , BD135 , BD135-10 , TIP42C , BD135-6 , BD135G , BD136 , BD136-10 , BD136-16 , BD136-6 , BD136G , BD137 .

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