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BD136
  BD136
  BD136
 
BD136
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BD136
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100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
BD136 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

BD136 Transistor (IC) Datasheet. Cross Reference Search. BD136 Equivalent

Type Designator: BD136

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 12

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BD136 transistor: TO126

BD136 Equivalent Transistors - Cross-Reference Search

 

BD136 PDF doc:

1.1. bd136_bd138_bd140-10.pdf Size:104K _motorola

BD136
BD136
Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 7708 TO225AA TYPE IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIII IIIIIII Rating Symbol Type Value Unit IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIII IIIIII IIII

1.2. bd136_bd138_bd140.pdf Size:104K _motorola

BD136
BD136
Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 7708 TO225AA TYPE IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIII IIIIIII Rating Symbol Type Value Unit IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIII IIIIII IIII

1.3. bd136_bd138_bd140.pdf Size:49K _philips

BD136
BD136
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mounting surface 3 base General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits. handbook, halfpage DESCRIPTION 2 PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 1 MAM272 Top view 1 2 3 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BD136 --45 V BD138 --60 V BD140 --100 V VCEO collector-emi

1.4. bd136_bd138_bd140.pdf Size:44K _st

BD136
BD136
BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BD136 BD138 BD140 VCBO Collector-Base Voltage (IE = 0) -45 -60 -80 V V Collector-Emitter Voltage (I = 0) -45 -60 -80 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V I Collector Current -1.5 A C I Collector Peak Current -3 A CM IB Base Current -0.5 A o P Total Dissipation at T ? 25 C12.5 W tot c o Ptot Total Dissipation at Tamb ? 25 C1.25 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/4 June 1997 BD136/BD138/BD140 THERMAL DATA o Rthj-case Thermal

1.5. bd135_bd136_bd139_bd140.pdf Size:155K _st

BD136
BD136
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and Figure 1. Internal schematic diagram the complementary PNP types are the BD136 and BD140. NPN PNP Table 1. Device summary Order codes Marking Package Packaging BD135 BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 SOT-32 Tube BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140-16 May 2008 Rev 5 1/9 www.st.com 9 Contents BD135 - BD136 - BD139 - BD140 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics .

1.6. bd136_bd138_bd140.pdf Size:41K _fairchild_semi

BD136
BD136
BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 1.5 A ICP Collector Current (Pulse) - 3.0 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25C) 12.5 W PC Collector Dissipation (Ta=25C) 1.25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD136 IC = - 30mA, IB = 0 - 45 V : BD138 - 60 V : BD140 - 80 V ICBO Collector Cut-off Current

1.7. bd136_bd138_bd140.pdf Size:175K _cdil

BD136
BD136
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collector -Emitter Voltage (RBE=1k ) VCER 45 60 100 V Collector -Base Voltage VCBO 45 60 100 V VEBO Emitter Base Voltage 5.0 V IC Collector Current 1.5 A ICM Collector Peak Current 2.0 A IB Base Current 0.5 A Power Dissipation @ Ta=25?C PD 1.25 W Derate above 25?C 10 mW/?C Power Dissipation @ Tc=25?C PD 12.5 W Derate above 25?C 100 mW/?C Power Dissipation @ Tc=70?C PD 8.0 W Operating and Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) 100 ?C/W Junction to Case Rth (j-c) 10 ?C/W ELECTRICAL CHARAC

1.8. bd136.pdf Size:64K _kec

BD136
BD136
SEMICONDUCTOR BD136 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E High Current. (Max. : -1.5A) F Low Voltage (Max. : -45V) DC Current Gain : hFE=40Min. @IC=-0.15A G Complementary to BD135. H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX M H 1.0 MAX J 1.9 MAX VCBO -45 V Collector-Base Voltage O + _ K 0.75 0.15 N P _ + L 15.5 0.5 1 2 3 VCEO -45 V Collector-Emitter Voltage _ + M 2.3 0.1 _ + N 0.65 0.15 VEBO Emitter-Base Voltage -5 V O 1.6 1. EMITTER P 3.4 MAX 2. COLLECTOR IC Collector Current -1.5 A 3. BASE IB Base Current -0.5 A 1.25 Ta=25 Collector Power TO-126 PC W Dissipation 10 Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-30V

1.9. bd136_bd138_bd140.pdf Size:119K _inchange_semiconductor

BD136
BD136
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD135/137/139 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS BD136 BD138 Open emitter BD140 VCEO VEBO IC ICM IBM Pt Tj Tstg Tamb HAN INC Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature BD136 BD138 BD140 GE S Open base EMIC OND TOR UC VALUE -45 -60 -100 -45 -60 -100 -5 -1.5 -2 -1 UNIT V V Open collector V A A A W Ўж Ўж Ўж TmbЎЬ 70Ўж 8 150 -65~150 -65~150 Operating ambient

1.10. bd136-138-140.pdf Size:167K _lge

BD136
BD136
BD136/BD138/BD140(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters) 2.500 MAXIMUM RATINGS (TA=25? unless otherwise noted) 7.400 2.900 1.100 7.800 1.500 Units Value 3.900 3.000 Symbol Parameter 4.100 3.200 BD135 BD137 BD139 10.600 0.000 11.000 0.300 VCBO Collector-Base Voltage -45 -60 -80 V 2.100 VCEO Collector-Emitter Voltage -45 -60 -80 V 2.300 Emitter-Base Voltage VEBO 1.170 -5 V 1.370 15.300 Collector Current -Continuous IC -1.5 A 15.700 PC Collector power dissipation 1.25 W 0.660 Junction Temperature TJ 150 ? 0.860 0.450 Storage Temperature Tstg -55-150 0.600 ? 2.290 TYP 4.480 4.680 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT BD136 -45 Collector-base breakdown voltage V(BR)CBO BD138 V Ic=-100ВµA, IE=0 -60 BD140 -80

1.11. stbd136t_stbd138t_stbd140t.pdf Size:367K _semtech

BD136
BD136
BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Current 0.5 A -IB O Total Power Dissipation @ TA=25 C 1.25 W Ptot O O Derate above 25 C 10 mW/ C O Total Power Dissipation @ TC=25 C 12.5 W Ptot O O Derate above 25 C 100 mW/ C O TJ Junction Temperature 150 C O Storage Temperature Range Tstg -65 to +150 C Thermal Resistance Parameter Symbol Value Unit O From junction to case Rth jc 10 W/ C O From junction to ambient Rth ja 100 W/ C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 22/03/2006 SEMTECH BD136T / BD138T / BD140T O Characteristics at Ta = 25 C

See also transistors datasheet: BD132 , BD132A , BD133 , BD135 , BD135-10 , BD135-16 , BD135-6 , BD135G , TIP35C , BD136-10 , BD136-16 , BD136-6 , BD136G , BD137 , BD137-10 , BD137-16 , BD137-6 .

Keywords

 BD136 Datasheet  BD136 Design BD136 MOSFET BD136 Power
 BD136 RoHS Compliant BD136 Service BD136 Triacs BD136 Semiconductor
 BD136 Database BD136 Innovation BD136 IC BD136 Electricity

 

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