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BD136-10 Transistor (IC) Datasheet. Cross Reference Search. BD136-10 Equivalent

Type Designator: BD136-10

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc), W: 12

Maximum Collector-Base Voltage |Vcb|, V: 45

Maximum Collector-Emitter Voltage |Vce|, V: 45

Maximum Emitter-Base Voltage |Veb|, V: 5

Maximum Collector Current |Ic max|, A: 1

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz: 50

Collector Capacitance (Cc), pF:

Forward Current Transfer Ratio (hFE), min: 63

Noise Figure, dB: -

Package: TO126

BD136-10 Transistor Equivalent Substitute - Cross-Reference Search

BD136-10 PDF doc:

3.1. bd136-138-140.pdf Size:167K _lge

BD136-10
BD136-10

BD136/BD138/BD140(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters) 2.500 MAXIMUM RATINGS (TA=25? unless otherwise noted) 7.400 2.900 1.100 7.800 1.500 Units Value 3.900 3.000 Symbol Parameter 4.100 3.200 BD135 BD137 BD139 10.600 0.000 11.000 0.30

5.1. bd136_bd138_bd140-10.pdf Size:104K _motorola

BD136-10
BD136-10

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

5.2. bd136_bd138_bd140.pdf Size:104K _motorola

BD136-10
BD136-10

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

5.3. bd136_bd138_bd140.pdf Size:49K _philips

BD136-10
BD136-10

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part

5.4. bd136_bd138_bd140.pdf Size:44K _st

BD136-10
BD136-10

BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 INTE

5.5. bd135_bd136_bd139_bd140.pdf Size:155K _st

BD136-10
BD136-10

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are

5.6. bd136_bd138_bd140.pdf Size:41K _fairchild_semi

BD136-10
BD136-10

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136

5.7. bd136_bd138_bd140.pdf Size:175K _cdil

BD136-10
BD136-10

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

5.8. bd136.pdf Size:64K _kec

BD136-10
BD136-10

SEMICONDUCTOR BD136 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E High Current. (Max. : -1.5A) F Low Voltage (Max. : -45V) DC Current Gain : hFE=40Min. @IC=-0.15A G Complementary to BD135. H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RAT

5.9. bd136_bd138_bd140.pdf Size:119K _inchange_semiconductor

BD136-10
BD136-10

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD135/137/139 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Ў¤ Absolute maximum ratings (Ta=2

5.10. stbd136t_stbd138t_stbd140t.pdf Size:367K _semtech

BD136-10
BD136-10

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur

See also transistors datasheet: BD132A , BD133 , BD135 , BD135-10 , BD135-16 , BD135-6 , BD135G , BD136 , 2N2222 , BD136-16 , BD136-6 , BD136G , BD137 , BD137-10 , BD137-16 , BD137-6 , BD137G .

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