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BD137G Transistor (IC) Datasheet. Cross Reference Search. BD137G Equivalent

Type Designator: BD137G

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 12

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BD137G transistor: TO126

BD137G Transistor Equivalent Substitute - Cross-Reference Search

BD137G PDF:

5.1. bd135_bd137_bd139.pdf Size:100K _motorola

BD137G
BD137G

Order this document MOTOROLA by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 Plastic Medium Power Silicon BD139 NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc NPN SILICON BD 135, 137, 139 are complementary with BD 136,

5.2. bd135_bd137_bd139_3.pdf Size:49K _philips

BD137G
BD137G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal pa

5.3. bd135_bd137_bd139.pdf Size:44K _st

BD137G
BD137G

BD135 BD137/BD139 NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are the BD136 1 2 BD138 and BD140. 3 SOT-32 INTERNAL SCHEMATIC DI

5.4. bd135_bd137_bd139.pdf Size:41K _fairchild_semi

BD137G
BD137G

BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD135 45 V : BD137 60 V : BD139 80 V VCEO Collector-Emitter Voltage : BD135 45 V

5.5. bd135_bd137_bd139.pdf Size:51K _samsung

BD137G
BD137G

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Base E

5.6. bd137.pdf Size:109K _utc

BD137G
BD137G

UNISONIC TECHNOLOGIES CO., LTD BD137 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS ? FEATURES * High current (max.1.5A) * Low voltage (max.60V) 1 TO-126 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BD137L-xx-T60-K BD137G-xx-T60-K TO-126 E C B Bulk BD137L-xx-T60-K (1) K: Bulk (1)Packing Type (2) T60: TO-126 (2)Package T

5.7. bd135-bd137-bd139.pdf Size:80K _secos

BD137G
BD137G

BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE (1) A Product-Rank BD135-6 BD135-10 BD135-16 B E F Product-Rank BD137-6

5.8. bd135_bd137_bd139.pdf Size:246K _cdil

BD137G
BD137G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD135 BD137 BD139 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

5.9. bd135_bd137_bd139.pdf Size:117K _inchange_semiconductor

BD137G
BD137G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD136/138/140 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD135 BD137 BD139 Ў¤ Absolute maximum ratings (Ta=2

5.10. bd135_bd137_bd139.pdf Size:329K _wietron

BD137G
BD137G

BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol BD135 BD137 BD139 Unit VCBO 45 60 80 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 1.5 A PD 1.25 W Power Disspation Tj 150 ?C Junctio

5.11. stbd135t_stbd137t_stbd139t.pdf Size:454K _semtech

BD137G
BD137G

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139T Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 KΩ) VCER 45 60 100 V Collector Base Vo

See also transistors datasheet: BD136-10 , BD136-16 , BD136-6 , BD136G , BD137 , BD137-10 , BD137-16 , BD137-6 , BD139 , BD138 , BD138-10 , BD138-6 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 .

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