All Transistors Datasheet

 

BD138 Transistor (IC) Datasheet. Cross Reference Search. BD138 Equivalent

Type Designator: BD138

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc), W: 12

Maximum Collector-Base Voltage |Vcb|, V: 60

Maximum Collector-Emitter Voltage |Vce|, V: 60

Maximum Emitter-Base Voltage |Veb|, V: 5

Maximum Collector Current |Ic max|, A: 1

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz: 50

Collector Capacitance (Cc), pF:

Forward Current Transfer Ratio (hFE), min: 40

Noise Figure, dB: -

Package: TO126

BD138 Transistor Equivalent Substitute - Cross-Reference Search

BD138 PDF:

1.1. 3ca138_bd138.pdf Size:132K _update

BD138
BD138

3CA138(BD138)型 PNP 硅高频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC≤70℃ 8 W ICM 2 A 极 Tjm 150 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 10 ℃/W IC=0.7A V(BR)CBO ICB=0.1mA ≥60 V V(BR)CEO ICE=0.1mA ≥60 V V(BR)EBO IEB=0.1mA ≥5.0 V 直 ICBO VCB=30V ≤0.1 μA 流 IEBO VEB=5V ≤0.1 μA 参 IC=0.5A 数 VCEsat ≤0.5 V

1.2. bd136_bd138_bd140-10.pdf Size:104K _motorola

BD138
BD138

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

1.3. bd136_bd138_bd140.pdf Size:104K _motorola

BD138
BD138

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

1.4. bd136_bd138_bd140.pdf Size:49K _philips

BD138
BD138

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part

1.5. bd136_bd138_bd140.pdf Size:44K _st

BD138
BD138

BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 INTE

1.6. bd136_bd138_bd140.pdf Size:41K _fairchild_semi

BD138
BD138

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136

1.7. bd138.pdf Size:79K _secos

BD138
BD138

BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-126 High Current 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE Product-Rank BD136-6 BD136-10 BD136-16 A Product-Rank BD138-6 BD138-10 BD138-16 B E F Product-Rank BD140-6 B

1.8. bd136_bd138_bd140.pdf Size:175K _cdil

BD138
BD138

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

1.9. bd136_bd138_bd140.pdf Size:119K _inchange_semiconductor

BD138
BD138

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD135/137/139 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Ў¤ Absolute maximum ratings (Ta=2

1.10. stbd136t_stbd138t_stbd140t.pdf Size:367K _semtech

BD138
BD138

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur

See also transistors datasheet: BD136-16 , BD136-6 , BD136G , BD137 , BD137-10 , BD137-16 , BD137-6 , BD137G , 8050 , BD138-10 , BD138-6 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 , BD139G .

Search Terms:

 BD138 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


BD138
  BD138
  BD138
  BD138
 
BD138
  BD138
  BD138
  BD138
 

social 

LIST

Last Update

BJT: NSV9435T1G | NSV60601MZ4T3G | NSV60601MZ4T1G | NSV60600MZ4T3G | NSV60600MZ4T1G | NSV60201LT1G | NSV60200LT1G | NSV60101DMTWTBG | NSV60100DMTWTBG | NSV40501UW3T2G | NSVMUN2237T1G | NSVMUN2233T1G | NSVMUN2212T1G | NSVMUN2112T1G | NSVMSD42WT1G | NSVBCW68GLT1G | NSVBCW32LT1G | NSVBCP69T1G | NSVBCP56-10T3G | NSVBCP53-16T3G |

Enter a full or partial SMD code with a minimum of 2 letters or numbers