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BD138-10 Transistor (IC) Datasheet. Cross Reference Search. BD138-10 Equivalent

Type Designator: BD138-10

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 12

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BD138-10 transistor: TO126

BD138-10 Transistor Equivalent Substitute - Cross-Reference Search

BD138-10 PDF:

5.1. 3ca138_bd138.pdf Size:132K _update

BD138-10
BD138-10

3CA138(BD138)型 PNP 硅高频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC≤70℃ 8 W ICM 2 A 极 Tjm 150 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 10 ℃/W IC=0.7A V(BR)CBO ICB=0.1mA ≥60 V V(BR)CEO ICE=0.1mA ≥60 V V(BR)EBO IEB=0.1mA ≥5.0 V 直 ICBO VCB=30V ≤0.1 μA 流 IEBO VEB=5V ≤0.1 μA 参 IC=0.5A 数 VCEsat ≤0.5 V

5.2. bd136_bd138_bd140-10.pdf Size:104K _motorola

BD138-10
BD138-10

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

5.3. bd136_bd138_bd140.pdf Size:104K _motorola

BD138-10
BD138-10

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

5.4. bd136_bd138_bd140.pdf Size:49K _philips

BD138-10
BD138-10

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part

5.5. bd136_bd138_bd140.pdf Size:44K _st

BD138-10
BD138-10

BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 INTE

5.6. bd136_bd138_bd140.pdf Size:41K _fairchild_semi

BD138-10
BD138-10

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136

5.7. bd138.pdf Size:79K _secos

BD138-10
BD138-10

BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-126 High Current 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE Product-Rank BD136-6 BD136-10 BD136-16 A Product-Rank BD138-6 BD138-10 BD138-16 B E F Product-Rank BD140-6 B

5.8. bd136_bd138_bd140.pdf Size:175K _cdil

BD138-10
BD138-10

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

5.9. bd136_bd138_bd140.pdf Size:119K _inchange_semiconductor

BD138-10
BD138-10

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD135/137/139 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Ў¤ Absolute maximum ratings (Ta=2

5.10. stbd136t_stbd138t_stbd140t.pdf Size:367K _semtech

BD138-10
BD138-10

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur

See also transistors datasheet: BD136-6 , BD136G , BD137 , BD137-10 , BD137-16 , BD137-6 , BD137G , BD138 , S8050 , BD138-6 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 , BD139G , BD140 .

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