BD138-10 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD138-10

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 12

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BD138-10 transistor: TO126

BD138-10 Equivalent Transistors - Cross-Reference Search

BD138-10 PDF document for downloads:

5.1. bd136_bd138_bd140-10.pdf Size:104K _motorola

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. � DC Current Gain � hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE � BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 77�08 TO�225AA TYPE IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIII IIIIIII Rating Symbol Type Value Unit IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIII IIIIII IIII

5.2. bd136_bd138_bd140.pdf Size:104K _motorola

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. � DC Current Gain � hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE � BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 77�08 TO�225AA TYPE IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIIIIII IIIIII IIIIIII Rating Symbol Type Value Unit IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIII IIIII IIII IIIIII IIII IIIIII IIII

5.3. bd136_bd138_bd140.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING � High current (max. 1.5 A) PIN DESCRIPTION � Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mounting surface 3 base � General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits. handbook, halfpage DESCRIPTION 2 PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 1 MAM272 Top view 1 2 3 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BD136 --45 V BD138 --60 V BD140 --100 V VCEO collector-emi

5.4. bd136_bd138_bd140.pdf Size:44K _st

BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BD136 BD138 BD140 VCBO Collector-Base Voltage (IE = 0) -45 -60 -80 V V Collector-Emitter Voltage (I = 0) -45 -60 -80 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V I Collector Current -1.5 A C I Collector Peak Current -3 A CM IB Base Current -0.5 A o P Total Dissipation at T ? 25 C12.5 W tot c o Ptot Total Dissipation at Tamb ? 25 C1.25 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/4 June 1997 BD136/BD138/BD140 THERMAL DATA o Rthj-case Thermal

5.5. bd136_bd138_bd140.pdf Size:41K _fairchild_semi

BD136/138/140 Medium Power Linear and Switching Applications � Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 1.5 A ICP Collector Current (Pulse) - 3.0 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25�C) 12.5 W PC Collector Dissipation (Ta=25�C) 1.25 W TJ Junction Temperature 150 �C TSTG Storage Temperature - 55 ~ 150 �C Electrical Characteristics TC=25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD136 IC = - 30mA, IB = 0 - 45 V : BD138 - 60 V : BD140 - 80 V ICBO Collector Cut-off Current

5.6. bd138.pdf Size:79K _secos

BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-126 High Current 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE Product-Rank BD136-6 BD136-10 BD136-16 A Product-Rank BD138-6 BD138-10 BD138-16 B E F Product-Rank BD140-6 BD140-10 BD140-16 C Range 40~100 63~160 100~250 N H L M K D J G Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 7.40 7.80 H 1.10 1.50 B 2.50 2.90 J 0.45 0.60 C 10.60 11.00 K 0.66 0.86 D 15.30 15.70 L 2.10 2.30 E 3.70 3.90 M 1.17 1.37 F 3.90 4.10 N 3.00 3.20 G 2.29 TYP. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit BD136 -45 Collector - Base Voltage BD138 V -60 V CBO BD140 -80 BD136 -45 Collector - Emitter Voltage V V BD138 CEO -60 BD140 -80 Emitter - Base Voltage VEBO -5 V A Collector C

5.7. bd136_bd138_bd140.pdf Size:119K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD135/137/139 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS BD136 BD138 Open emitter BD140 VCEO VEBO IC ICM IBM Pt Tj Tstg Tamb HAN INC Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature BD136 BD138 BD140 GE S Open base EMIC OND TOR UC VALUE -45 -60 -100 -45 -60 -100 -5 -1.5 -2 -1 UNIT V V Open collector V A A A W Ўж Ўж Ўж TmbЎЬ 70Ўж 8 150 -65~150 -65~150 Operating ambient

See also transistors datasheet: BD136-6 , BD136G , BD137 , BD137-10 , BD137-16 , BD137-6 , BD137G , BD138 , BU808DFI , BD138-6 , BD138G , BD139 , BD139-10 , BD139-16 , BD139-6 , BD139G , BD140 .

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