BD239F Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD239F

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 200

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BD239F transistor: TO220

BD239F Equivalent Transistors - Cross-Reference Search

BD239F PDF document for downloads:

5.1. bd239c_bd240c.pdf Size:79K _st

BD239C BD240C ® COMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 3 The PNP complementary type is BD240C. 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD239C Unit PNP BD240C Unit V Collector-Emitter Voltage (R = 100?)115 V CER BE VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 2 A ICM Collector Peak Current 4 A I Base Current 0.6 A B P Total Dissipation at T ? 25 oC30 W tot c Ptot Total Dissipation at Tamb ? 25 oC2 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. 1/4 August 1998 BD239C/BD240C THERMAL DATA o Rthj-case Thermal Resistance Junc

5.2. bd239_bd239a_bd239b_bd239c.pdf Size:27K _fairchild_semi

BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage : BD239 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V VCER Collector-Emitter Voltage : BD239 55 V : BD239A 70 V : BD239B 90 V : BD239C 115 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 4 A IB Base Current 0.6 A PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage : BD239 IC = 30mA, IB = 0 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V ICEO Collector Cut-off Current : BD239/A VCE = 30V, IB = 0 0.3 m

5.3. bd239_a_b_c.pdf Size:119K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD240/A/B/C APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD239 BD239A BD239B VCBO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage GE S BD239C BD239 BD239A BD239B BD239C Open emitter EMIC OND TOR UC VALUE 55 70 90 115 45 60 UNIT V VCEO Open base 80 100 Open collector 5 2 4 0.6 TC=25Ўж 30 150 -65~150 Ўж Ўж V VEBO IC ICM IB PC Tj Tstg V A A A W Collector power dissipation Junction temperature Storage temperature

See also transistors datasheet: BD238-6 , BD238G , BD239 , BD239A , BD239B , BD239C , BD239D , BD239E , 9013 , BD240 , BD240A , BD240B , BD240C , BD240D , BD240E , BD240F , BD241 .

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