BD240A Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD240A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 70

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BD240A transistor: TO220

BD240A Equivalent Transistors - Cross-Reference Search

BD240A PDF document for downloads:

5.1. bd239c_bd240c.pdf Size:79K _st

BD239C BD240C ® COMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 3 The PNP complementary type is BD240C. 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD239C Unit PNP BD240C Unit V Collector-Emitter Voltage (R = 100?)115 V CER BE VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 2 A ICM Collector Peak Current 4 A I Base Current 0.6 A B P Total Dissipation at T ? 25 oC30 W tot c Ptot Total Dissipation at Tamb ? 25 oC2 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. 1/4 August 1998 BD239C/BD240C THERMAL DATA o Rthj-case Thermal Resistance Junc

5.2. bd240_a_b_c.pdf Size:27K _fairchild_semi

BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Base Voltage : BD240 - 45 V : BD240A - 60 V : BD240B - 80 V : BD240C - 100 V VCER Collector-Emitter Voltage : BD240 - 55 V : BD240A - 70 V : BD240B - 90 V : BD240C - 115 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 2 A ICP *Collector Current (Pulse) - 4 A IB Base Current - 0.6 A PC Collector Dissipation ( TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD240 IC = - 30mA, IB = 0 - 45 V : BD240A - 60 V : BD240B - 80 V : BD240C - 100 V ICEO Collector Cut-off Current : BD2

5.3. bd240.pdf Size:86K _power-innovations

BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PACKAGE (TOP VIEW) 30 W at 25°C Case Temperature 2 A Continuous Collector Current B 1 C 2 4 A Peak Collector Current E 3 Customer-Specified Selections Available Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD240 -55 BD240A -70 Collector-emitter voltage (RBE = 100 ?) VCER V BD240B -90 BD240C -115 BD240 -45 BD240A -60 Collector-emitter voltage (IC = -30 mA) VCEO V BD240B -80 BD240C -100 Emitter-base voltage VEBO -5 V Continuous collector current IC -2 A Peak collector current (see Note 1) ICM -4 A Continuous base current IB -0.6 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 30 W Continuous device di

5.4. bd240_a_b_c.pdf Size:119K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD240/A/B/C DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD239/A/B/C APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD240 BD240A BD240B VCBO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage GE S BD240C BD240 BD240A BD240B BD240C Open emitter EMIC OND TOR UC VALUE -55 -70 -90 -115 -45 -60 UNIT V VCEO Open base -80 -100 Open collector -5 -2 -4 -0.6 TC=25Ўж 30 150 -65~150 Ўж Ўж V VEBO IC ICM IB PC Tj Tstg V A A A W Collector power dissipation Junction temperature Storage temperature

See also transistors datasheet: BD239 , BD239A , BD239B , BD239C , BD239D , BD239E , BD239F , BD240 , AC125 , BD240B , BD240C , BD240D , BD240E , BD240F , BD241 , BD241A , BD241B .

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