BD244E Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD244E

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 65

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BD244E transistor: TO220

BD244E Equivalent Transistors - Cross-Reference Search

BD244E PDF document for downloads:

5.1. bd243b_bd244b_bd243c_bd244c.pdf Size:140K _motorola

Order this document MOTOROLA by BD243B/D SEMICONDUCTOR TECHNICAL DATA NPN BD243B Complementary Silicon Plastic BD243C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD244B • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage — BD244C* VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B VCEO(sus) = 100 Vdc (Min) — BD243C, BD244C *Motorola Preferred Device • High Current Gain Bandwidth Product IIIIIIIIIIIIIIIIIIIIIII fT = 3.0 MHz (Min) @ IC = 500 mAdc 6 AMPERE • Compact TO–220 AB Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII POWER TRANSISTORS COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII SILICON MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIII IIII III IIII IIII IIII IIII 80–100 VOLTS BD243B BD243C 65 WATTS IIIIIIIIIIII IIII III IIIIIIIIIIII IIII III IIIIIIIIIIII

5.2. bd243c_bd244c.pdf Size:341K _st

BD243C BD244C Complementary power transistors . Features ¦ Complementary NPN-PNP devices Applications ¦ Power linear and switching 3 2 1 Description TO-220 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagram coupled with very low saturation voltage. The PNP type is BD244C. Table 1. Device summary Order code Marking Package Packaging BD243C BD243C TO-220 Tube BD244C BD244C July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings BD243C BD244C 1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit BD243C (NPN) BD244C (PNP) VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitte-base voltage (IC = 0) 5 V IC Collector current 6 A ICM Collector peak current (tP < 5ms) 10 A IB Base current 2 A PTOT Total dissipation at Tc = 25°C 65 W Tstg Stora

5.3. bd244_bd244a_bd244b_bd244c.pdf Size:38K _fairchild_semi

BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD244 - 45 V : BD244A - 60 V : BD244B - 80 V : BD244C - 100 V VCEO Collector-Emitter Voltage : BD244 - 45 V : BD244A - 60 V : BD244B - 80 V : BD244C - 100 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 6 A ICP *Collector Current (Pulse) - 10 A IB Base Current - 2 A PC Collector Dissipation (TC=25°C) 65 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD244 IC = - 30mA, IB = 0 - 45 V : BD244A - 60 V : BD244B - 80 V : BD244C - 100 V ICEO Collec

5.4. bd243b_bd243c_bd244b_bd244c.pdf Size:91K _onsemi

BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http://onsemi.com Features 6 AMPERE • Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON • Collector Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B 65 WATTS = 100 Vdc (Min) - BD243C, BD244C • High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc • Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc TO-220AB BD243B, BD244B 80 CASE 221A-09 BD243C, BD244C 100 1 STYLE 1 2 3 Collector-Base Voltage VCB Vdc BD243B, BD244B 80 BD243C, BD244C 100 Emitter-Base Voltage VEB 5.0 Vdc MARKING DIAGRAM Collector Current - Continuous IC 6 Adc - Peak 10 Base Current IB 2.0

5.5. bd244.pdf Size:86K _power-innovations

BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD243 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25°C Case Temperature 6 A Continuous Collector Current B 1 C 2 10 A Peak Collector Current E 3 Customer-Specified Selections Available Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD244 -55 BD244A -70 Collector-emitter voltage (RBE = 100 ?) VCER V BD244B -90 BD244C -115 BD244 -45 BD244A -60 Collector-emitter voltage (IC = -30 mA) VCEO V BD244B -80 BD244C -100 Emitter-base voltage VEBO -5 V Continuous collector current IC -6 A Peak collector current (see Note 1) ICM -10 A Continuous base current IB -3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W Continuous device di

5.6. bd244_a_b_c.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD244/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C ·Complement to Type BD243/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BD244 -45 BD244A -60 VCBO Collector-Base Voltage V BD244B -80 BD244C -100 BD244 -45 BD244A -60 VCEO Collector-Emitter Voltage V BD244B -80 BD244C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6.0 A ICM Collector Current-Peak -10 A IBB Base Current -2.0 A Collector Power Dissipation PC @ TC=25? 65 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junctio

See also transistors datasheet: BD243D , BD243E , BD243F , BD244 , BD244A , BD244B , BD244C , BD244D , 8550 , BD244F , BD245 , BD245A , BD245B , BD245C , BD245D , BD245E , BD245F .

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