BD318 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD318

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 16

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BD318 transistor: TO3

BD318 Equivalent Transistors - Cross-Reference Search

BD318 PDF document for downloads:

1.1. bd315_bd316_bd317_bd318.pdf Size:109K _motorola

1.2. bd318.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD318 DESCRIPTION Ў¤ With TO-3 package Ў¤ High DC current gain Ў¤ Excellent safe operating area Ў¤ Complement to type BD317 APPLICATIONS Ў¤ Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector 1 2 3 Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage CHA IN Collector current Base current Junction temperature Storage temperature Emitter-base voltage GE S N Open collector EMIC DUC ON VALUE -100 TOR UNIT V V V A A A W Ўж Ўж -100 -7 -16 -20 -5 Collector current(peak) Total power dissipation TC=25Ўж 200 -65~200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.8

See also transistors datasheet: BD311 , BD312 , BD312A-16 , BD313 , BD314 , BD315 , BD316 , BD317 , RCA1001 , BD320 , BD320A , BD320B , BD320C , BD321 , BD321A , BD321B , BD321C .

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