BD379-25 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD379-25

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 150

Noise Figure, dB: -

Package of BD379-25 transistor: TO126

BD379-25 Equivalent Transistors - Cross-Reference Search

BD379-25 PDF document for downloads:

5.1. bd375_bd377_bd379.pdf Size:42K _fairchild_semi

BD375/377/379 Medium Power Linear and Switching Applications • Complement to BD376, BD378 and BD380 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD375 50 V : BD377 75 V : BD379 100 V VCEO Collector-Emitter Voltage : BD375 45 V : BD377 60 V : BD379 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 3 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD375 IC = 100mA, IB = 0 45 V : BD377 60 V : BD379 80 V BVCBO Collector-Base : BD375 IC = 100µA, IE = 0 50 V Breakdown Voltage : BD377 75 V : BD379 100 V I

See also transistors datasheet: BD378 , BD378-10 , BD378-16 , BD378-25 , BD378-6 , BD379 , BD379-10 , BD379-16 , 2N3773 , BD379-6 , BD380 , BD380-10 , BD380-16 , BD380-25 , BD380-6 , BD385 , BD386 .

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