BD433-25 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD433-25

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 36

Maximum collector-base voltage |Ucb|, V: 22

Maximum collector-emitter voltage |Uce|, V: 22

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 30

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BD433-25 transistor: TO126

BD433-25 Equivalent Transistors - Cross-Reference Search

BD433-25 PDF document for downloads:

4.1. bd433-435-437.pdf Size:199K _lge

BD433/435/437(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Amplifier and switching applications 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.900 Symbol Parameter Value Units 3.000 4.100 3.200 VCBO Collector-Base Voltage BD433 22 10.600 0.000 BD435 32 V 11.000 0.300 BD437 45 VCEO Collector-Emitter Voltage BD433 22 2.100 BD435 32 V 2.300 BD437 45 1.170 1.370 VEBO 5 Emitter-Base Voltage V 15.300 IC Collector Current –Continuous 4 A Dimensions in inches and (millimeters) 15.700 PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? 0.660 0.860 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 0.600 2.290 TYP 4.480 Parameter Symbol Test conditions 4.680 MIN TYP MAX UNIT BD433 22 Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 BD435 32 V BD437 45

5.1. bd433_bd435_bd437_bd434_bd436_bd438.pdf Size:70K _st

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output stages. 3 The complementary PNP types are BD434, BD436, and BD438 respectively. SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD433 BD435 BD437 PNP BD434 BD436 BD438 V Collector-Base Voltage (I = 0) 22 32 45 V CBO E VCES Collector-Emitter Voltage (VBE = 0) 22 32 45 V VCEO Collector-Emitter Voltage (IB = 0) 22 32 45 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A I Collector Peak Current (t ? 10 ms) 7 A CM I Base Current 1 A B Ptot Total Dissipation at Tc ? 25 oC36 W o T Storage Temperature -65 to 150 C stg o

5.2. bd433_bd434_bd435_bd436_bd437_bd438.pdf Size:51K _st

BD433/5/7 BD434/6/8 ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car-radio output stages. The complementary PNP types are BD434, SOT-32 BD436, and BD438 respectively. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD433 BD435 BD437 PNP BD434 BD436 BD438 VCBO Collector-Base Voltage (IE = 0) 22 32 45 V VCES Collector-Emitter Voltage (VBE = 0) 22 32 45 V VCEO Collector-Emitter Voltage (IB = 0) 22 32 45 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A ICM 7A Collector Peak Current (t ? 10 ms) IB Base Current 1 A Ptot Total Dissipation at Tc ? 25 oC 36 W o Tstg Storage Temperature -65 to 150 C o

5.3. bd433_bd435_bd437.pdf Size:44K _fairchild_semi

BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD433 22 V : BD435 32 V : BD437 45 V VCES Collector-Emitter Voltage : BD433 22 V : BD435 32 V : BD437 45 V VCEO Collector-Emitter Voltage : BD433 22 V : BD435 32 V : BD437 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 7 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 36 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD433/435/437 Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage : BD433 IC = 100mA, IB

5.4. bd433_bd435_bd437.pdf Size:57K _samsung

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD433 VCBO 22 V : BD435 32 V : BD437 45 V Collector Emitter Voltage : BD433 VCES 22 V : BD435 32 V 1. Emitter 2.Collector 3.Base : BD437 45 V Collector Emitter Voltage : BD433 VCEO 22 V : BD435 32 V : BD437 45 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Current (Pulse) IC 7 A Base Current IB 1 A Collector Dissipation (TC=25 ) P C 36 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Emitter Sustaining Voltage : BD433 VCEO(sus) IC = 100mA, IB = 0 22 V : BD435 32 V : BD437 45 V Collector Base Voltage : BD433 ICBO VCB = 22V, IE = 0 100 uA : BD435 VCB = 32V, IE = 0 100 uA

5.5. bd433_435_437.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD434/436/438 APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD433 BD435 VCBO Collector-base voltage VCEO CHA IN Emitter -base voltage Collector current (DC) Collector-emitter voltage GE S N BD437 BD433 BD435 BD437 Open emitter EMIC OND TOR UC VALUE 22 32 45 22 32 45 UNIT V Open base V VEBO IC ICM IB PC Tj Tstg Open collector 5 4 7 1 V A A A W Ўж Ўж Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 36 150 -65~150

See also transistors datasheet: BD421 , BD422 , BD424 , BD429 , BD430 , BD433 , BD433-10 , BD433-16 , AC127 , BD433A , BD433B , BD433C , BD434 , BD434-10 , BD434-16 , BD434-25 , BD434A .

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