BD515-1 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD515-1

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of BD515-1 transistor: TO202

BD515-1 Equivalent Transistors - Cross-Reference Search

BD515-1 PDF document for downloads:

5.1. bd515_bd517_bd519.pdf Size:80K _motorola

See also transistors datasheet: BD508-5 , BD509 , BD509-1 , BD509-5 , BD510 , BD510-1 , BD510-5 , BD515 , BC109C , BD515-5 , BD516 , BD516-1 , BD516-5 , BD517 , BD517-1 , BD517-5 , BD518 .

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