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BD534L Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD534L

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of BD534L transistor: TO220

BD534L Equivalent Transistors - Cross-Reference Search

BD534L PDF document for downloads:

5.1. bd533_bd534_bd535_bd536_bd537_bd538.pdf Size:44K _st

BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are BD534, 1 BD536, and BD538 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD533 BD535 BD537 PNP BD534 BD536 BD538 VCBO Collector-Base Voltage (IE = 0) 456080 V V Collector-Emitter Voltage (V = 0) 456080 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 456080 V V Emitter-Base Voltage (I = 0) 5 V EBO C I I Collector and Emitter Current 8 A C, E IB Base Current 1 A Ptot Total Dissipation at Tc ? 25 oC50 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negati

5.2. bd533_bd534_bd535_bd536_bd537.pdf Size:359K _st

BD533 BD535 BD537 BD534 BD536 Complementary power transistors . Features ¦ BD533, BD535, and BD537 are NPN transistors Description 3 The devices are manufactured in Planar 2 1 technology with “Base Island” layout. The resulting transistor shows exceptional high gain TO-220 performance coupled with very low saturation voltage. The PNP types are BD534 and BD536. Figure 1. Internal schematic diagrams Table 1. Device summary Order code Marking Package Packaging BD533 BD533 BD534 BD534 BD535 BD535 TO-220 Tube BD536 BD536 BD537 BD537 July 2007 Rev 4 1/11 www.st.com 11 Absolute maximum ratings BD533 BD534 BD535 BD536 BD537 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN BD533 BD535 BD537 PNP BD534 BD536 VCBO Collector-base voltage (IE = 0) 45 60 80 V VCES Collector-emitter voltage (VB = 0) 45 60 80 V VCEO Collector-base voltage (IB = 0) 45 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current

5.3. bd533fp_bd534fp.pdf Size:33K _st

BD533FP BD534FP COMPLEMENTARY SILICON POWER TRANSISTORS BD534FP IS SGS-THOMSON PREFERRED SALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded isolated package, intented for use in medium 3 2 power linear and switching applications. 1 The complementary PNP type is BD534FP. TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD533FP PNP BD534FP VCBO Collector-Base Voltage (IE = 0) 45 V V Collector-Emitter Voltage (V = 0) 45 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 45 V V Emitter-Base Voltage (I = 0) 5 V EBO C I I Collector and Emitter Current 8 A C, E IB Base Current 1 A Ptot Total Dissipation at Tc ? 25 oC25 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. 1/4 April 1998 BD533F

5.4. bd534_bd536_bd538.pdf Size:36K _fairchild_semi

BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD534 - 45 V : BD536 - 60 V : BD538 - 80 V VCEO Collector-Emitter Voltage : BD534 - 45 V : BD536 - 60 V : BD538 - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 8 A IB Base Current - 1 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current : BD534 VCB = - 45V, IE = 0 - 100 µA : BD536 VCB = - 60V, IE = 0 - 100 µA : BD538 VCB = - 80V, IE = 0 - 100 µA ICES Collector Cut-off Current : BD534 VCE = - 45V, VBE = 0 - 100

5.5. bd534_536_538.pdf Size:119K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD534/536/538 DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD533/535/537 Ў¤ Low saturation voltage APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER VCBO VCEO CHA IN Emitter-base voltage Collector current Emitter current Base current Collector-base voltage GE S N BD536 BD538 BD534 BD536 BD538 BD534 Open emitter- EMIC CONDITIONS OND TOR UC VALUE -45 -60 -80 -45 UNIT V Collector-emitter voltage Open base -60 -80 V VEBO IC IE IB PC Tj Tstg Open collector -5 -8 -8 -1 V A A A W Ўж Ўж Collector power dissipation Junction temperature Storage temperature TC=25Ўж 50 150 -65~150

See also transistors datasheet: BD533A , BD533J , BD533K , BD533L , BD534 , BD534A , BD534J , BD534K , BC547C , BD535 , BD535A , BD535J , BD535K , BD536 , BD536A , BD536J , BD536K .

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