BD539 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD539

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 45

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of BD539 transistor: TO220

BD539 Equivalent Transistors - Cross-Reference Search

BD539 PDF document for downloads:

1.1. bd539-a-b-c-d.pdf Size:82K _bourns

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS ? Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) ? 45 W at 25°C Case Temperature ? 5 A Continuous Collector Current B 1 ? Up to 120 V VCEO rating C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD539 40 BD539A 60 Collector-base voltage BD539B VCBO 80 V BD539C 100 BD539D 120 BD539 40 BD539A 60 Collector-emitter voltage (see Note 1) BD539B VCEO 80 V BD539C 100 BD539D 120 Emitter-base voltage VEBO 5V Continuous collector current IC 5A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Storage temperatur

1.2. bd539.pdf Size:85K _power-innovations

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25°C Case Temperature 5 A Continuous Collector Current B 1 C 2 Up to 120 V VCEO rating E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD539 40 BD539A 60 Collector-base voltage BD539B VCBO 80 V BD539C 100 BD539D 120 BD539 40 BD539A 60 Collector-emitter voltage (see Note 1) BD539B VCEO 80 V BD539C 100 BD539D 120 Emitter-base voltage VEBO 5 V Continuous collector current IC 5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Operating free air temperature range TA -65 to +150

1.3. bd539.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD539 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Complement to Type BD540 APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NP

1.4. bd539d.pdf Size:233K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD539D DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type BD540D APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silic

1.5. bd539a.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Complement to Type BD540A APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon

1.6. bd539b.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type BD540B APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon

1.7. bd539c.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD539C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Complement to Type BD540C APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silic

See also transistors datasheet: BD537J , BD537K , BD537L , BD538 , BD538A , BD538J , BD538K , BD538L , 9013 , BD539A , BD539B , BD539C , BD539D , BD540 , BD540A , BD540B , BD540C .

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