BD540A Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD540A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 45

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of BD540A transistor: TO220

BD540A Equivalent Transistors - Cross-Reference Search

BD540A PDF document for downloads:

1.1. bd540a.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD540A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Complement to Type BD539A APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Si

5.1. bd540-a-b-c.pdf Size:83K _bourns

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS ? Designed for Complementary Use with the BD539 Series TO-220 PACKAGE (TOP VIEW) ? 45 W at 25°C Case Temperature ? 5 A Continuous Collector Current B 1 ? Customer-Specified Selections Available C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD540 -40 BD540A -60 Collector-base voltage (IE = 0) VCBO V BD540B -80 BD540C -100 BD540 -40 BD540A -60 Collector-emitter voltage (IB = 0) (see Note 1) VCEO V BD540B -80 BD540C -100 Emitter-base voltage VEBO -5 V Continuous collector current IC -5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C St

5.2. bd540.pdf Size:85K _power-innovations

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD539 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25°C Case Temperature 5 A Continuous Collector Current B 1 C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD540 -40 BD540A -60 Collector-base voltage (IE = 0) VCBO V BD540B -80 BD540C -100 BD540 -40 BD540A -60 Collector-emitter voltage (IB = 0) (see Note 1) VCEO V BD540B -80 BD540C -100 Emitter-base voltage VEBO -5 V Continuous collector current IC -5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Operating free air temperature range

5.3. bd540.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD540 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Complement to Type BD539 APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Sili

5.4. bd540c.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD540C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Complement to Type BD539C APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc

5.5. bd540b.pdf Size:263K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD540B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type BD539B APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 45 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.78 ?/W Rth j-c Thermal Resistance, Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Si

See also transistors datasheet: BD538K , BD538L , BD539 , BD539A , BD539B , BD539C , BD539D , BD540 , 2N60C , BD540B , BD540C , BD540D , BD543 , BD543A , BD543B , BD543C , BD543D .

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