All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BD679
  BD679
  BD679
 
BD679
  BD679
  BD679
 
BD679
  BD679
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU505F
BU506 .. BUL54A
BUL54AFI .. BUV26
BUV26A .. BUX67B
BUX67C .. C63
C64 .. CDT1313
CDT1315 .. CIL932
CIL997 .. CMPT3646
CMPT3904 .. CS9011I
CS9012 .. CSB834Y
CSB856 .. CSD1168
CSD1168P .. CZT2222A
CZT2907 .. D38S6
D38S7 .. D44U5
D44U6 .. DCP68-25
DCP69 .. DTA115EE
DTA115EEA .. DTC143E
DTC143ECA .. DXT3906
DXT458P5 .. ECG333
ECG334 .. ES3111
ES3112 .. F4
F5 .. FJPF13009
FJPF3305 .. FMMT4401
FMMT4402 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34/15
GFT34/30 .. GT2765
GT2766 .. HA7520
HA7521 .. HMJE3055T
HMPSA06 .. HUN5130
HUN5131 .. JC548
JC548A .. KF2001
KF2002 .. KRA723T
KRA723U .. KRC655E
KRC655U .. KSA539-O
KSA539-R .. KSC2383-Y
KSC2500 .. KSD1616A
KSD1616A-G .. KSR1110
KSR1111 .. KT3146G-9
KT3146V-9 .. KT605AM
KT605B .. KT8117A
KT8117B .. KT841V
KT842A .. KTA1543T
KTA1544T .. KTC5706L
KTC5707D .. MA117
MA1702 .. MF1164
MF3304 .. MJ6302
MJ6308 .. MJE341K
MJE3439 .. MM3906
MM4000 .. MMBT4274
MMBT4275 .. MMUN2116
MMUN2116L .. MP3691
MP3692 .. MPQ5130
MPQ5131 .. MPS6727
MPS6728 .. MRF316
MRF317 .. MUN5316DW
MUN5316DW1 .. NA61U
NA61W .. NB122E
NB122EH .. NB321E
NB321F .. NPS3641
NPS3642 .. NSS1C201LT1G
NSS1C201MZ4T1G .. OC4405
OC443 .. PBSS302PX
PBSS302PZ .. PE3100
PE4010 .. PN3904
PN3904R .. PZT4401
PZT4403 .. RN1116FT
RN1116MFV .. RN2306
RN2307 .. RS7515
RS7526 .. SD2857
SD2857F .. SFT352
SFT353 .. SQ3960
SQ3960F .. ST83003
ST8509 .. SUR546J
SUR547J .. T3003
T3004 .. TI607A
TI610 .. TIP664
TIP665 .. TN3019A
TN3020 .. TP3905R
TP3906 .. UMC2N
UMC3 .. UN6117S
UN6118 .. ZT112
ZT113 .. ZTX326M
ZTX327 .. ZXTN23015CFH
ZXTN25012EFH .. ZXTPS720MC
 
BD679 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BD679 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD679

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BD679 transistor: TO126

BD679 Equivalent Transistors - Cross-Reference Search

BD679 PDF doc:

1.1. bd675_bd675a_bd677_bd677a_bd679_bd679a_bd681.pdf Size:112K _motorola

BD679
BD679
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.2. bd675_bd677_bd679_bd681.pdf Size:112K _motorola

BD679
BD679
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.3. bd677_bd677a_bd678_bd678a_bd679_bd679a_bd680_bd680a_bd681_bd682.pdf Size:41K _st

BD679
BD679
BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 The complementary PNP types are BD678, 3 BD678A, BD680, BD680A and BD682 respectively. SOT-32 INTERNAL SCHEMATIC DIAGRAM R Typ. = 10 K? R Typ. = 150 ? 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A I Collector Peak Current 6 A CM IB Base Current 0.1 A o P Total Dissipation at T ? 25 C40 W tot c o Tstg Storage Temperature -65 to 150 C o Tj Max

1.4. bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf Size:87K _st

BD679
BD679
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications INTERNAL SCHEMATIC DIAGRAM The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. R1 Typ.= 7K ? R2 Typ.= 230 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 VCBO Collector-Base Voltage (IE = 0) 60 80 100 V V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V I Collec

1.5. bd675a_bd677a_bd679a_bd681.pdf Size:39K _fairchild_semi

BD679
BD679
BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VCEO Collector-Emitter Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 6 A IB Base Current 100 mA PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage : BD675A IC = 50mA, IB = 0 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V IC

1.6. bd675_bd677_bd679_bd681.pdf Size:88K _comset

BD679
BD679
NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD675/A 45 BD677/A 60 VCEO Collector-Emitter Voltage V BD679/A 80 BD681/A 100 BD675/A 45 BD677/A 60 VCBO Collector-Base Voltage V BD679/A 80 BD681/A 100 VEBO Emitter-Base Voltage 5 V IC 4 IC Collector Current A ICM 6 IB Base current (peak value) IBM 0.1 A PT Total power Dissipation @ Tmb = 25C 40 Watts TJ Junction Temperature 150 C TStg Storage Temperature -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to mouting base 3.12 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W COMSET SEMICONDUC

1.7. bd675_bd677_bd679_bd681_bd683.pdf Size:176K _cdil

BD679
BD679
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector Base Voltage 45 60 80 100 120 V Collector Emitter Voltage VCEO 45 60 80 100 120 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 4.0 A Base Current IB 0.1 A Total Power Dissipation@ Ta=25oC PD 1.25 W Derate above 25?C 10 mW/ ?C Total Power Dissipation@ Tc=25oC PD 40 W Derate above 25?C 0.32 W / ?C Operating & Storage Junction Tj,Tstg - 55 to + 150 ?C Temperature Range THERMAL RESISTANCE From Junction to case Rth(j-c) 3.13 ?C/W Junction to Ambient in free air Rth (j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise) DESCRIPTION SYMBOLTEST CONDITION

1.8. bd675_bd677_bd679.pdf Size:118K _inchange_semiconductor

BD679
BD679
Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676/678/680 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/BD677/BD679 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD675 BD677 VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH BD679 BD675 BD677 SEM E Open emitter Open base OND IC TOR UC VALUE 45 60 80 45 60 80 UNIT V V BD679 Open collector VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature 5 4 7 0.1 V A A A W Ўж Ўж TC=25Ўж 40 150 -55~150 THERMAL

1.9. bd679a.pdf Size:232K _cystek

BD679
BD679
Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors •Pb-free lead plating package Equivalent Circuit Outline BD679A TO-126 C B R1≈8k R2≈120 B:Base E C:Collector E:Emitter E C B BD679A CYStek Product Specification Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC(DC) 4 A Base Current IB 1 A Pd(TA=25℃)

See also transistors datasheet: BD676A , BD676H , BD677 , BD677A , BD677H , BD678 , BD678A , BD678H , BC109 , BD679A , BD679H , BD680 , BD680A , BD680H , BD681 , BD682 , BD683 .

Keywords

 BD679 Datasheet  BD679 Datenblatt  BD679 RoHS  BD679 Distributor
 BD679 Application Notes  BD679 Component  BD679 Circuit  BD679 Schematic
 BD679 Equivalent  BD679 Cross Reference  BD679 Data Sheet  BD679 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com