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BD679
  BD679
  BD679
 
BD679
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BD679
  BD679
 
 
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100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
BD679 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BD679 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD679

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BD679 transistor: TO126

BD679 Equivalent Transistors - Cross-Reference Search

BD679 PDF doc:

1.1. bd675_bd675a_bd677_bd677a_bd679_bd679a_bd681.pdf Size:112K _motorola

BD679
BD679
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.2. bd675_bd677_bd679_bd681.pdf Size:112K _motorola

BD679
BD679
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.3. bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf Size:87K _st

BD679
BD679
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications INTERNAL SCHEMATIC DIAGRAM The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. R1 Typ.= 7K ? R2 Typ.= 230 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 VCBO Collector-Base Voltage (IE = 0) 60 80 100 V V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V I Collec

1.4. bd677_bd677a_bd678_bd678a_bd679_bd679a_bd680_bd680a_bd681_bd682.pdf Size:41K _st

BD679
BD679
BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 The complementary PNP types are BD678, 3 BD678A, BD680, BD680A and BD682 respectively. SOT-32 INTERNAL SCHEMATIC DIAGRAM R Typ. = 10 K? R Typ. = 150 ? 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A I Collector Peak Current 6 A CM IB Base Current 0.1 A o P Total Dissipation at T ? 25 C40 W tot c o Tstg Storage Temperature -65 to 150 C o Tj Max

1.5. bd675a_bd677a_bd679a_bd681.pdf Size:39K _fairchild_semi

BD679
BD679
BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VCEO Collector-Emitter Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 6 A IB Base Current 100 mA PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage : BD675A IC = 50mA, IB = 0 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V IC

1.6. bd675_bd677_bd679_bd681.pdf Size:88K _comset

BD679
BD679
NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD675/A 45 BD677/A 60 VCEO Collector-Emitter Voltage V BD679/A 80 BD681/A 100 BD675/A 45 BD677/A 60 VCBO Collector-Base Voltage V BD679/A 80 BD681/A 100 VEBO Emitter-Base Voltage 5 V IC 4 IC Collector Current A ICM 6 IB Base current (peak value) IBM 0.1 A PT Total power Dissipation @ Tmb = 25C 40 Watts TJ Junction Temperature 150 C TStg Storage Temperature -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to mouting base 3.12 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W COMSET SEMICONDUC

1.7. bd675_bd677_bd679_bd681_bd683.pdf Size:176K _cdil

BD679
BD679
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector Base Voltage 45 60 80 100 120 V Collector Emitter Voltage VCEO 45 60 80 100 120 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 4.0 A Base Current IB 0.1 A Total Power Dissipation@ Ta=25oC PD 1.25 W Derate above 25?C 10 mW/ ?C Total Power Dissipation@ Tc=25oC PD 40 W Derate above 25?C 0.32 W / ?C Operating & Storage Junction Tj,Tstg - 55 to + 150 ?C Temperature Range THERMAL RESISTANCE From Junction to case Rth(j-c) 3.13 ?C/W Junction to Ambient in free air Rth (j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise) DESCRIPTION SYMBOLTEST CONDITION

1.8. bd675_bd677_bd679.pdf Size:118K _inchange_semiconductor

BD679
BD679
Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676/678/680 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/BD677/BD679 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD675 BD677 VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH BD679 BD675 BD677 SEM E Open emitter Open base OND IC TOR UC VALUE 45 60 80 45 60 80 UNIT V V BD679 Open collector VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature 5 4 7 0.1 V A A A W Ўж Ўж TC=25Ўж 40 150 -55~150 THERMAL

1.9. bd679a.pdf Size:232K _cystek

BD679
BD679
Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors •Pb-free lead plating package Equivalent Circuit Outline BD679A TO-126 C B R1≈8k R2≈120 B:Base E C:Collector E:Emitter E C B BD679A CYStek Product Specification Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC(DC) 4 A Base Current IB 1 A Pd(TA=25℃)

See also transistors datasheet: BD676A , BD676H , BD677 , BD677A , BD677H , BD678 , BD678A , BD678H , BC109 , BD679A , BD679H , BD680 , BD680A , BD680H , BD681 , BD682 , BD683 .

Keywords

 BD679 Datasheet  BD679 Datenblatt  BD679 RoHS  BD679 Distributor
 BD679 Application Notes  BD679 Component  BD679 Circuit  BD679 Schematic
 BD679 Equivalent  BD679 Cross Reference  BD679 Data Sheet  BD679 Fiche Technique

 

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