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BD679
  BD679
  BD679
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BD679
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100DA025D .. 2N1011
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2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
BD679 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BD679 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD679

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BD679 transistor: TO126

BD679 Equivalent Transistors - Cross-Reference Search

BD679 PDF doc:

1.1. bd675_bd675a_bd677_bd677a_bd679_bd679a_bd681.pdf Size:112K _motorola

BD679
BD679
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.2. bd675_bd677_bd679_bd681.pdf Size:112K _motorola

BD679
BD679
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, *Motorola Preferred Device 678, 678A, 680, 680A, 682 IIIIIIIIIIIIIIIIIIIIIIII BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III 4.0 AMPERE DARLINGTON IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIII IIII III MAXIMUM RATINGS POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III IIII III IIIIIIIII III IIII III IIII IIII III IIII IIII III BD675 BD677 BD679 NPN SILICON BD675A BD677A BD679A Rating SymbolIII IIII Unit BD681III IIIIIIIII IIIIIIIII III I

1.3. bd677_bd677a_bd678_bd678a_bd679_bd679a_bd680_bd680a_bd681_bd682.pdf Size:41K _st

BD679
BD679
BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 The complementary PNP types are BD678, 3 BD678A, BD680, BD680A and BD682 respectively. SOT-32 INTERNAL SCHEMATIC DIAGRAM R Typ. = 10 K? R Typ. = 150 ? 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A I Collector Peak Current 6 A CM IB Base Current 0.1 A o P Total Dissipation at T ? 25 C40 W tot c o Tstg Storage Temperature -65 to 150 C o Tj Max

1.4. bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf Size:87K _st

BD679
BD679
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications INTERNAL SCHEMATIC DIAGRAM The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. R1 Typ.= 7K ? R2 Typ.= 230 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 VCBO Collector-Base Voltage (IE = 0) 60 80 100 V V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V I Collec

1.5. bd675a_bd677a_bd679a_bd681.pdf Size:39K _fairchild_semi

BD679
BD679
BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VCEO Collector-Emitter Voltage : BD675A 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 6 A IB Base Current 100 mA PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage : BD675A IC = 50mA, IB = 0 45 V : BD677A 60 V : BD679A 80 V : BD681 100 V IC

1.6. bd675_bd677_bd679_bd681.pdf Size:88K _comset

BD679
BD679
NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD675/A 45 BD677/A 60 VCEO Collector-Emitter Voltage V BD679/A 80 BD681/A 100 BD675/A 45 BD677/A 60 VCBO Collector-Base Voltage V BD679/A 80 BD681/A 100 VEBO Emitter-Base Voltage 5 V IC 4 IC Collector Current A ICM 6 IB Base current (peak value) IBM 0.1 A PT Total power Dissipation @ Tmb = 25C 40 Watts TJ Junction Temperature 150 C TStg Storage Temperature -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to mouting base 3.12 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W COMSET SEMICONDUC

1.7. bd675_bd677_bd679_bd681_bd683.pdf Size:176K _cdil

BD679
BD679
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector Base Voltage 45 60 80 100 120 V Collector Emitter Voltage VCEO 45 60 80 100 120 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 4.0 A Base Current IB 0.1 A Total Power Dissipation@ Ta=25oC PD 1.25 W Derate above 25?C 10 mW/ ?C Total Power Dissipation@ Tc=25oC PD 40 W Derate above 25?C 0.32 W / ?C Operating & Storage Junction Tj,Tstg - 55 to + 150 ?C Temperature Range THERMAL RESISTANCE From Junction to case Rth(j-c) 3.13 ?C/W Junction to Ambient in free air Rth (j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise) DESCRIPTION SYMBOLTEST CONDITION

1.8. bd675_bd677_bd679.pdf Size:118K _inchange_semiconductor

BD679
BD679
Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676/678/680 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/BD677/BD679 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BD675 BD677 VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH BD679 BD675 BD677 SEM E Open emitter Open base OND IC TOR UC VALUE 45 60 80 45 60 80 UNIT V V BD679 Open collector VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature 5 4 7 0.1 V A A A W Ўж Ўж TC=25Ўж 40 150 -55~150 THERMAL

1.9. bd679a.pdf Size:232K _cystek

BD679
BD679
Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 1/6 NPN Epitaxial Planar Transistor BD679A Description The BD679A is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors •Pb-free lead plating package Equivalent Circuit Outline BD679A TO-126 C B R1≈8k R2≈120 B:Base E C:Collector E:Emitter E C B BD679A CYStek Product Specification Spec. No. : C652T3-M Issued Date : 2006.05.24 CYStech Electronics Corp. Revised Date : 2011.09.30 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC(DC) 4 A Base Current IB 1 A Pd(TA=25℃)

See also transistors datasheet: BD676A , BD676H , BD677 , BD677A , BD677H , BD678 , BD678A , BD678H , BC109 , BD679A , BD679H , BD680 , BD680A , BD680H , BD681 , BD682 , BD683 .

Keywords

 BD679 Datasheet  BD679 Datenblatt  BD679 RoHS  BD679 Distributor
 BD679 Application Notes  BD679 Component  BD679 Circuit  BD679 Schematic
 BD679 Equivalent  BD679 Cross Reference  BD679 Data Sheet  BD679 Fiche Technique

 

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