All Transistors. 2N2904 Datasheet

 

2N2904 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N2904

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO39

2N2904 Transistor Equivalent Substitute - Cross-Reference Search

2N2904 Datasheet PDF:

1.1. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2904
2N2904

2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 10

1.2. 2n2904-a_2n2905-a.pdf Size:59K _central

2N2904

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.3. 2n2904_05.pdf Size:75K _cdil

2N2904
2N2904

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous

1.4. 2n2904a_05a.pdf Size:146K _cdil

2N2904
2N2904

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904A 2N2905A TO-39 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2904A, 05A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V Col

1.5. 2n2904u.pdf Size:51K _kec

2N2904
2N2904

SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Satura

1.6. 2n2904u1.pdf Size:51K _kec

2N2904
2N2904

SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Satur

1.7. 2n2904e.pdf Size:51K _kec

2N2904
2N2904

SEMICONDUCTOR 2N2904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=50nA(Max.), IBL=50nA(Max.) 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=30V, VEB=3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05 Low S

Datasheet: 2N2898 , 2N2899 , 2N29 , 2N290 , 2N2900 , 2N2902 , 2N2903 , 2N2903A , B772 , 2N2904A , 2N2904AL , 2N2904AS , 2N2904L , 2N2904S , 2N2905 , 2N2905A , 2N2905AL .

 


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