2N2904 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2904

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N2904 transistor: TO39

2N2904 Equivalent Transistors - Cross-Reference Search

2N2904 PDF document for downloads:

1.1. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 102, 2N2906/2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) – 60 V VCEO Collector-emitter Voltage (IB = 0) – 40 V VEBO Emitter-base Voltage (IC =0) – 5 V IC Collector Current – 600 mA Pto t Total Power Dissipation at T ? 25 °C amb for 2N2904 and 2N2905 0.6 W for 2N2906 and 2N2907 0.4 W at Tcase ? 25 °C for 2N2904 and 2N2905 3 W for 2N2906 and 2N2907 1.8 W Tstg, Tj Storage and Junction Temperature – 65 to 200 °C October 1988 1/5 2N2904-2N2905-

1.2. 2n2904-a_2n2905-a.pdf Size:59K _central

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1.3. 2n2904e.pdf Size:51K _kec

SEMICONDUCTOR 2N2904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=50nA(Max.), IBL=50nA(Max.) 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=30V, VEB=3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05 Low Saturation Voltage _ J 0.12 + 0.05 P P : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. P 5 Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TES6 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V EQUIVALENT CIRCUIT (TOP VIEW) IC Collector Current 200 mA 6 5 4 IB Base Current 50 mA PC * Collector Power Dissipation 200 mW Tj Junction Temperature 150 Q1 Q2 Tstg -55 150 Storag

1.4. 2n2904u.pdf Size:51K _kec

SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Saturation Voltage _ H 0.9 + 0.1 T T 0.15+0.1/-0.05 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance G : Cob=4pF(Max.) @VCB=5V. 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT US6 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V EQUIVALENT CIRCUIT (TOP VIEW) IC Collector Current 200 mA 6 5 4 IB Base Current 50 mA PC * Collector Power Dissipation 200 mW Tj Junction Temperature 150 Q1 Q2 Tstg -55 150

1.5. 2n2904u1.pdf Size:51K _kec

SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Saturation Voltage _ H 0.9 + 0.1 T T 0.15+0.1/-0.05 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance G : Cob=4pF(Max.) @VCB=5V. 1. Q1 BASE 2. Q2 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q1 EMITTER 6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT US6 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO EQUIVALENT CIRCUIT (TOP VIEW) Emitter-Base Voltage 6 V IC Collector Current 200 mA 6 5 4 IB Base Current 50 mA PC * Collector Power Dissipation 200 mW Q1 Q2 Tj Junction Temperature 150 Tstg -55 150 S

See also transistors datasheet: 2N2898 , 2N2899 , 2N29 , 2N290 , 2N2900 , 2N2902 , 2N2903 , 2N2903A , AD162 , 2N2904A , 2N2904AL , 2N2904AS , 2N2904L , 2N2904S , 2N2905 , 2N2905A , 2N2905AL .

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