All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N2904
  2N2904
  2N2904
 
2N2904
  2N2904
  2N2904
 
2N2904
  2N2904
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU505F
BU506 .. BUL54A
BUL54AFI .. BUV26
BUV26A .. BUX67B
BUX67C .. C63
C64 .. CDT1313
CDT1315 .. CIL932
CIL997 .. CMPT3646
CMPT3904 .. CS9011I
CS9012 .. CSB834Y
CSB856 .. CSD1168
CSD1168P .. CZT2222A
CZT2907 .. D38S6
D38S7 .. D44U5
D44U6 .. DCP68-25
DCP69 .. DTA115EE
DTA115EEA .. DTC143E
DTC143ECA .. DXT3906
DXT458P5 .. ECG333
ECG334 .. ES3111
ES3112 .. F4
F5 .. FJPF13009
FJPF3305 .. FMMT4401
FMMT4402 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34/15
GFT34/30 .. GT2765
GT2766 .. HA7520
HA7521 .. HMJE3055T
HMPSA06 .. HUN5130
HUN5131 .. JC548
JC548A .. KF2001
KF2002 .. KRA723T
KRA723U .. KRC655E
KRC655U .. KSA539-O
KSA539-R .. KSC2383-Y
KSC2500 .. KSD1616A
KSD1616A-G .. KSR1110
KSR1111 .. KT3146G-9
KT3146V-9 .. KT605AM
KT605B .. KT8117A
KT8117B .. KT841V
KT842A .. KTA1543T
KTA1544T .. KTC5706L
KTC5707D .. MA117
MA1702 .. MF1164
MF3304 .. MJ6302
MJ6308 .. MJE341K
MJE3439 .. MM3906
MM4000 .. MMBT4274
MMBT4275 .. MMUN2116
MMUN2116L .. MP3691
MP3692 .. MPQ5130
MPQ5131 .. MPS6727
MPS6728 .. MRF316
MRF317 .. MUN5316DW
MUN5316DW1 .. NA61U
NA61W .. NB122E
NB122EH .. NB321E
NB321F .. NPS3641
NPS3642 .. NSS1C201LT1G
NSS1C201MZ4T1G .. OC4405
OC443 .. PBSS302PX
PBSS302PZ .. PE3100
PE4010 .. PN3904
PN3904R .. PZT4401
PZT4403 .. RN1116FT
RN1116MFV .. RN2306
RN2307 .. RS7515
RS7526 .. SD2857
SD2857F .. SFT352
SFT353 .. SQ3960
SQ3960F .. ST83003
ST8509 .. SUR546J
SUR547J .. T3003
T3004 .. TI607A
TI610 .. TIP664
TIP665 .. TN3019A
TN3020 .. TP3905R
TP3906 .. UMC2N
UMC3 .. UN6117S
UN6118 .. ZT112
ZT113 .. ZTX326M
ZTX327 .. ZXTN23015CFH
ZXTN25012EFH .. ZXTPS720MC
 
2N2904 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N2904 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2904

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N2904 transistor: TO39

2N2904 Equivalent Transistors - Cross-Reference Search

2N2904 PDF doc:

1.1. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2904
2N2904
2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 102, 2N2906/2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) 60 V VCEO Collector-emitter Voltage (IB = 0) 40 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 600 mA Pto t Total Power Dissipation at T ? 25 C amb for 2N2904 and 2N2905 0.6 W for 2N2906 and 2N2907 0.4 W at Tcase ? 25 C for 2N2904 and 2N2905 3 W for 2N2906 and 2N2907 1.8 W Tstg, Tj Storage and Junction Temperature 65 to 200 C October 1988 1/5 2N2904-2N2905-

1.2. 2n2904-a_2n2905-a.pdf Size:59K _central

2N2904
2N2904
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.3. 2n2904_05.pdf Size:75K _cdil

2N2904
2N2904
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 600 mA Power Dissipation @ Ta=25?C PD 600 mW Derate Above 25?C 3.43 mW/ ?C Power Dissipation @ Tc=25?C PD 3.0 W Derate Above 25?C 17.2 mW/ ?C Operating And Storage Junction Tj, Tstg - 65 to +200 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT *VCEO IC=10mA, IB=0 Collector Emitter Voltage 40 V VCBO Collector Base Voltage IC=10µA, IE=0 60 V VEBO Emitter Base Voltage IE=10µA, IC=0 5 V ICEX VCE=30V, VBE=0.5V Collector Cut Off Current 50 nA ICBO VCB=50V, IE=0 Collector Cut Off Current 20 n

1.4. 2n2904a_05a.pdf Size:146K _cdil

2N2904
2N2904
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904A 2N2905A TO-39 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2904A, 05A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA Power Dissipation @Ta=25 degC PD 600 mW Derate Above 25deg C 3.43 mW/deg C @ Tc=25 degC PD 3.0 W Derate Above 25deg C 17.2 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT Collector -Emitter Voltage VCEO* IC=10mA,IB=0 60 - V Collector -Base Voltage VCBO IC=10uA.IE=0 60 - V Emitter-Base Voltage VEBO IE=10uA, IC=0 5.0 - V Collector-Cut off Current ICBO VCB=50V, IE=0 - 10 nA Ta=150 deg C VCB=

1.5. 2n2904u.pdf Size:51K _kec

2N2904
2N2904
SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Saturation Voltage _ H 0.9 + 0.1 T T 0.15+0.1/-0.05 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance G : Cob=4pF(Max.) @VCB=5V. 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT US6 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V EQUIVALENT CIRCUIT (TOP VIEW) IC Collector Current 200 mA 6 5 4 IB Base Current 50 mA PC * Collector Power Dissipation 200 mW Tj Junction Temperature 150 Q1 Q2 Tstg -55 150

1.6. 2n2904e.pdf Size:51K _kec

2N2904
2N2904
SEMICONDUCTOR 2N2904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=50nA(Max.), IBL=50nA(Max.) 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=30V, VEB=3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05 Low Saturation Voltage _ J 0.12 + 0.05 P P : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. P 5 Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TES6 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V EQUIVALENT CIRCUIT (TOP VIEW) IC Collector Current 200 mA 6 5 4 IB Base Current 50 mA PC * Collector Power Dissipation 200 mW Tj Junction Temperature 150 Q1 Q2 Tstg -55 150 Storag

1.7. 2n2904u1.pdf Size:51K _kec

2N2904
2N2904
SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Saturation Voltage _ H 0.9 + 0.1 T T 0.15+0.1/-0.05 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance G : Cob=4pF(Max.) @VCB=5V. 1. Q1 BASE 2. Q2 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q1 EMITTER 6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT US6 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO EQUIVALENT CIRCUIT (TOP VIEW) Emitter-Base Voltage 6 V IC Collector Current 200 mA 6 5 4 IB Base Current 50 mA PC * Collector Power Dissipation 200 mW Q1 Q2 Tj Junction Temperature 150 Tstg -55 150 S

See also transistors datasheet: 2N2898 , 2N2899 , 2N29 , 2N290 , 2N2900 , 2N2902 , 2N2903 , 2N2903A , B772 , 2N2904A , 2N2904AL , 2N2904AS , 2N2904L , 2N2904S , 2N2905 , 2N2905A , 2N2905AL .

Keywords

 2N2904 Datasheet  2N2904 Datenblatt  2N2904 RoHS  2N2904 Distributor
 2N2904 Application Notes  2N2904 Component  2N2904 Circuit  2N2904 Schematic
 2N2904 Equivalent  2N2904 Cross Reference  2N2904 Data Sheet  2N2904 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com