BD877 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BD877

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 9

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 4000

Noise Figure, dB: -

Package of BD877 transistor: TO126

BD877 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: BD861 , BD862 , BD863 , BD864 , BD865 , BD866 , BD875 , BD876 , 2N3053 , BD878 , BD879 , BD880 , BD895 , BD895A , BD896 , BD896A , BD897 .

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