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2N2906AQF Transistor (IC) Datasheet. Cross Reference Search. 2N2906AQF Equivalent

Type Designator: 2N2906AQF

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N2906AQF transistor: LCC6

2N2906AQF Transistor Equivalent Substitute - Cross-Reference Search

2N2906AQF PDF:

3.1. 2n2906_2n2906a_2.pdf Size:52K _philips

2N2906AQF
2N2906AQF

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors 1997 Jun 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 ba

3.2. 2n2906a_07a.pdf Size:226K _cdil

2N2906AQF
2N2906AQF

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2906A, 07A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V Col

4.1. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2906AQF
2N2906AQF

2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 10

4.2. 2n2906_2n2907.pdf Size:96K _central

2N2906AQF
2N2906AQF

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.3. 2n2906_7.pdf Size:141K _cdil

2N2906AQF
2N2906AQF

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Conti

4.4. 2n2906u.pdf Size:52K _kec

2N2906AQF
2N2906AQF

SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=-50nA(Max.), IBL=-50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=-30V, VEB=-3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Sa

4.5. 2n2906e.pdf Size:50K _kec

2N2906AQF
2N2906AQF

SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=-30V, VEB=-3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05

See also transistors datasheet: 2N2905A , 2N2905AL , 2N2905L , 2N2905S , 2N2906 , 2N2906A , 2N2906ACSM , 2N2906ADCSM , C103 , 2N2906CSM , 2N2907 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM .

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