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2N2907
  2N2907
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2N2907
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2N2907
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
2N2907 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N2907 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2907

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N2907 transistor: TO18

2N2907 Equivalent Transistors - Cross-Reference Search

2N2907 PDF doc:

1.1. mtp2n2907a.pdf Size:240K _motorola

2N2907
2N2907
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2907A/D Amplifier Transistor PNP Silicon P2N2907A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO –60 Vdc 3 Collector–Base Voltage VCBO –60 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO –5.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO –60 — Vdc (IC = –10 mAdc, IB =

1.2. 2n2907_2n2907a_1.pdf Size:52K _philips

2N2907
2N2907
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING • High current (max. 600 mA) PIN DESCRIPTION • Low voltage (max. 60 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Switching and linear amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP switching transistor in a TO-18 metal package. 2 NPN complements: 2N2222 and 2N2222A. 3 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --60 V VCEO collector-emitter voltage open base 2N2907 --40 V 2N2907A --60 V IC collector current (DC) --600 mA Ptot total power dissipation Tamb ? 25 °C - 400 mW hFE DC current gain IC = -150 mA; VCE = -

1.3. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2907
2N2907
2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 102, 2N2906/2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) – 60 V VCEO Collector-emitter Voltage (IB = 0) – 40 V VEBO Emitter-base Voltage (IC =0) – 5 V IC Collector Current – 600 mA Pto t Total Power Dissipation at T ? 25 °C amb for 2N2904 and 2N2905 0.6 W for 2N2906 and 2N2907 0.4 W at Tcase ? 25 °C for 2N2904 and 2N2905 3 W for 2N2906 and 2N2907 1.8 W Tstg, Tj Storage and Junction Temperature – 65 to 200 °C October 1988 1/5 2N2904-2N2905-

1.4. 2n2905a_2n2907a.pdf Size:727K _st

2N2907
2N2907
2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -60 V VCEO Collector-Emitter Voltage (IB = 0) -60 V VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -0.6 A ICM Collector Peak Current (tp < 5 ms) -0.8 A P tot Total Dissipation at Tamb ? 25 oC for 2N2905A 0.6 W for 2N2907A 0.4 W at TC ? 25 oC 3 W for 2N2905A 1.8 W for 2N2907A o Tstg Storage Temperature -65 to 175 C o T Max. Operating Junction Temperature 175 C j 1/7 February 2003 2N2905A/2N2907A THERMAL DATA TO-39 TO-18 o R Thermal Resistance Junction-Case Max 50 83.3 C/W thj-case o Rthj-amb Thermal Resistance J

1.5. 2n2906_2n2907.pdf Size:96K _central

2N2907
2N2907
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n2907_2n2907a(to-18).pdf Size:453K _mcc

2N2907
2N2907
MCC 2N2907 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2N2907A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.600mA) • Low voltage (max.60V) PNP Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage TO-18 2N2907 40 V 2N2907A 60 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (DC) 600 mA ICM Peak Collector Current 800 mA IBM Peak Base Current 200 mA O TJ Operating Junction Temperature -55 to +150 C O TSTG Storage Temperature -55 to +150 C Thermal Characteristics Symbol Rating Max Unit Total power Dissipation Ptot TA?25? 400 mW TC?25 ? 1.2 W RJC Thermal Resistance, Junction to Case 146 K/W RJA Thermal Resistance, Junction to Ambient 350 K/W Electrical Characteristics

1.7. p2n2907a.pdf Size:162K _onsemi

2N2907
2N2907
P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25°C PD 625 mW Derate above 25°C 5.0 mW/°C TO--92 Total Device Dissipation @ TC =25°C PD 1.5 W CASE 29 Derate above 25°C 12 mW/°C STYLE 17 Operating and Storage Junction TJ, Tstg --55 to °C Temperature Range +150 1 1 2 2 THERMAL CHARACTERISTICS 3 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction to Ambient R?JA 200 °C/W Thermal Resistance, Junction to Case R?JC 83.3 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommend

1.8. 2n2907aua.pdf Size:95K _optek

2N2907
2N2907

1.9. 2n2907aub.pdf Size:242K _optek

2N2907
2N2907
Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V •Miniature package to minimize circuit Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V board area Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA •Hermetically sealed Operating Junction Temperature (T ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C J •Footprint and pin-out matches SOT-23 packaged transistors Storage Junction Temperature (T ) . . . . . . . .

1.10. p2n2907_a.pdf Size:91K _cdil

2N2907
2N2907
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package E CB Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT VCEO Collector Emitter Voltage 40 60 V VCBO Collector Base Voltage 60 60 V VEBO Emitter Base Voltage 5 V Collector Current ICM 600 mA Total Power Dissipation @ Ta=25?C 625 mW PD Derate above 25?C 5 mW/?C Total Power Dissipation @ TC=25?C 1.5 W PD Derate above 25?C 12 mW/?C Operating and Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case 83.3 ?C/W Rth (j-a) Junction to Ambient 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION P2N2907 P2N2907A UNIT *VCEO IC=10mA, IB=0 C

See also transistors datasheet: 2N2905L , 2N2905S , 2N2906 , 2N2906A , 2N2906ACSM , 2N2906ADCSM , 2N2906AQF , 2N2906CSM , 2SC1740 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM , 2N2908 , 2N2909 .

Keywords

 2N2907 Datasheet  2N2907 Datenblatt  2N2907 RoHS  2N2907 Distributor
 2N2907 Application Notes  2N2907 Component  2N2907 Circuit  2N2907 Schematic
 2N2907 Equivalent  2N2907 Cross Reference  2N2907 Data Sheet  2N2907 Fiche Technique

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