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2N2907 Transistor (IC) Datasheet. Cross Reference Search. 2N2907 Equivalent

Type Designator: 2N2907

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N2907 transistor: TO18

2N2907 Transistor Equivalent Substitute - Cross-Reference Search

2N2907 PDF:

1.1. mtp2n2907a.pdf Size:240K _motorola

2N2907
2N2907

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2907A/D Amplifier Transistor PNP Silicon P2N2907A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO –60 Vdc 3 Collector–Base Voltage VCBO –60 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO –5.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC –600 m

1.2. 2n2907_2n2907a_1.pdf Size:52K _philips

2N2907
2N2907

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING • High current (max. 600 mA) PIN DESCRIPTION • Low voltage (max. 60 V). 1 emitter 2 ba

1.3. 2n2905a_2n2907a.pdf Size:727K _st

2N2907
2N2907

2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCB

1.4. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2907
2N2907

2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 10

1.5. 2n2906_2n2907.pdf Size:96K _central

2N2907
2N2907

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n2907_2n2907a(to-18).pdf Size:453K _mcc

2N2907
2N2907

MCC 2N2907 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2N2907A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.600mA) • Low voltage (max.60V) PNP Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol R

1.7. p2n2907a.pdf Size:162K _onsemi

2N2907
2N2907

P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25°C PD 625 mW Dera

1.8. 2n2907aub.pdf Size:242K _optek

2N2907
2N2907

Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

1.9. 2n2907aua.pdf Size:95K _optek

2N2907
2N2907

1.10. p2n2907_a.pdf Size:91K _cdil

2N2907
2N2907

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package E CB Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT VCEO Col

1.11. 2n2907as.pdf Size:377K _first_silicon

2N2907
2N2907

SEMICONDUCTOR 2N2907AS TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which 3 is designed for low power surface mount applications. 2 Features 1 compliance with RoHS requirements. • We declare that the material of product SOT– 23 ORDERING INFORMATION †

1.12. 2n2907au.pdf Size:265K _first_silicon

2N2907
2N2907

SEMICONDUCTOR 2N2907AU TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-323/SC-70 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING IN

See also transistors datasheet: 2N2905L , 2N2905S , 2N2906 , 2N2906A , 2N2906ACSM , 2N2906ADCSM , 2N2906AQF , 2N2906CSM , 2SC1740 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM , 2N2908 , 2N2909 .

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