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2N2907
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2N2907 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2N2907 Transistor (IC) Datasheet. Cross Reference Search. 2N2907 Equivalent

Type Designator: 2N2907

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N2907 transistor: TO18

2N2907 Equivalent Transistors - Cross-Reference Search

 

2N2907 PDF:

1.1. mtp2n2907a.pdf Size:240K _motorola

2N2907
2N2907
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2907A/D Amplifier Transistor PNP Silicon P2N2907A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO –60 Vdc 3 Collector–Base Voltage VCBO –60 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO –5.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO –60 — Vdc (IC = –10 mAdc, IB =

1.2. 2n2907_2n2907a_1.pdf Size:52K _philips

2N2907
2N2907
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING • High current (max. 600 mA) PIN DESCRIPTION • Low voltage (max. 60 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Switching and linear amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP switching transistor in a TO-18 metal package. 2 NPN complements: 2N2222 and 2N2222A. 3 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --60 V VCEO collector-emitter voltage open base 2N2907 --40 V 2N2907A --60 V IC collector current (DC) --600 mA Ptot total power dissipation Tamb ? 25 °C - 400 mW hFE DC current gain IC = -150 mA; VCE = -

1.3. 2n2905a_2n2907a.pdf Size:727K _st

2N2907
2N2907
2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -60 V VCEO Collector-Emitter Voltage (IB = 0) -60 V VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -0.6 A ICM Collector Peak Current (tp < 5 ms) -0.8 A P tot Total Dissipation at Tamb ? 25 oC for 2N2905A 0.6 W for 2N2907A 0.4 W at TC ? 25 oC 3 W for 2N2905A 1.8 W for 2N2907A o Tstg Storage Temperature -65 to 175 C o T Max. Operating Junction Temperature 175 C j 1/7 February 2003 2N2905A/2N2907A THERMAL DATA TO-39 TO-18 o R Thermal Resistance Junction-Case Max 50 83.3 C/W thj-case o Rthj-amb Thermal Resistance J

1.4. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2907
2N2907
2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 102, 2N2906/2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) – 60 V VCEO Collector-emitter Voltage (IB = 0) – 40 V VEBO Emitter-base Voltage (IC =0) – 5 V IC Collector Current – 600 mA Pto t Total Power Dissipation at T ? 25 °C amb for 2N2904 and 2N2905 0.6 W for 2N2906 and 2N2907 0.4 W at Tcase ? 25 °C for 2N2904 and 2N2905 3 W for 2N2906 and 2N2907 1.8 W Tstg, Tj Storage and Junction Temperature – 65 to 200 °C October 1988 1/5 2N2904-2N2905-

1.5. 2n2906_2n2907.pdf Size:96K _central

2N2907
2N2907
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.6. 2n2907_2n2907a(to-18).pdf Size:453K _mcc

2N2907
2N2907
MCC 2N2907 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2N2907A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.600mA) • Low voltage (max.60V) PNP Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage TO-18 2N2907 40 V 2N2907A 60 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (DC) 600 mA ICM Peak Collector Current 800 mA IBM Peak Base Current 200 mA O TJ Operating Junction Temperature -55 to +150 C O TSTG Storage Temperature -55 to +150 C Thermal Characteristics Symbol Rating Max Unit Total power Dissipation Ptot TA?25? 400 mW TC?25 ? 1.2 W RJC Thermal Resistance, Junction to Case 146 K/W RJA Thermal Resistance, Junction to Ambient 350 K/W Electrical Characteristics

1.7. p2n2907a.pdf Size:162K _onsemi

2N2907
2N2907
P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25°C PD 625 mW Derate above 25°C 5.0 mW/°C TO--92 Total Device Dissipation @ TC =25°C PD 1.5 W CASE 29 Derate above 25°C 12 mW/°C STYLE 17 Operating and Storage Junction TJ, Tstg --55 to °C Temperature Range +150 1 1 2 2 THERMAL CHARACTERISTICS 3 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction to Ambient R?JA 200 °C/W Thermal Resistance, Junction to Case R?JC 83.3 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommend

1.8. 2n2907aub.pdf Size:242K _optek

2N2907
2N2907
Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V •Miniature package to minimize circuit Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V board area Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA •Hermetically sealed Operating Junction Temperature (T ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C J •Footprint and pin-out matches SOT-23 packaged transistors Storage Junction Temperature (T ) . . . . . . . .

1.9. 2n2907aua.pdf Size:95K _optek

2N2907
2N2907

1.10. p2n2907_a.pdf Size:91K _cdil

2N2907
2N2907
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package E CB Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT VCEO Collector Emitter Voltage 40 60 V VCBO Collector Base Voltage 60 60 V VEBO Emitter Base Voltage 5 V Collector Current ICM 600 mA Total Power Dissipation @ Ta=25?C 625 mW PD Derate above 25?C 5 mW/?C Total Power Dissipation @ TC=25?C 1.5 W PD Derate above 25?C 12 mW/?C Operating and Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case 83.3 ?C/W Rth (j-a) Junction to Ambient 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION P2N2907 P2N2907A UNIT *VCEO IC=10mA, IB=0 C

See also transistors datasheet: 2N2905L , 2N2905S , 2N2906 , 2N2906A , 2N2906ACSM , 2N2906ADCSM , 2N2906AQF , 2N2906CSM , 2SC1740 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM , 2N2908 , 2N2909 .

Keywords

 2N2907 Datasheet  2N2907 Design 2N2907 MOSFET 2N2907 Power
 2N2907 RoHS Compliant 2N2907 Service 2N2907 Triacs 2N2907 Semiconductor
 2N2907 Database 2N2907 Innovation 2N2907 IC 2N2907 Electricity

 

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