All Transistors. 2N2908 Datasheet

 

2N2908 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N2908

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO53

2N2908 Transistor Equivalent Substitute - Cross-Reference Search

2N2908 Datasheet PDF:

5.1. 2n2900.pdf Size:155K _rca

2N2908

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5.2. st2n2907-a.pdf Size:1188K _update

2N2908
2N2908



5.3. mtp2n2907a.pdf Size:240K _motorola

2N2908
2N2908

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2907A/D Amplifier Transistor PNP Silicon P2N2907A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO –60 Vdc 3 Collector–Base Voltage VCBO –60 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO –5.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC –600 m

5.4. 2n2905_2n2905a_cnv_2.pdf Size:55K _philips

2N2908
2N2908

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2905; 2N2905A FEATURES PINNING • High current (max. 600 mA) PIN DESCRIPTION • Low voltage (max. 60 V).

5.5. 2n2907_2n2907a_1.pdf Size:52K _philips

2N2908
2N2908

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING • High current (max. 600 mA) PIN DESCRIPTION • Low voltage (max. 60 V). 1 emitter 2 ba

5.6. 2n2906_2n2906a_2.pdf Size:52K _philips

2N2908
2N2908

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors 1997 Jun 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A FEATURES PINNING • High current (max. 600 mA) PIN DESCRIPTION • Low voltage (max. 60 V). 1 emitter 2 ba

5.7. 2n2905a_2n2907a.pdf Size:727K _st

2N2908
2N2908

2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCB

5.8. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2908
2N2908

2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 10

5.9. 2n2904-a_2n2905-a.pdf Size:59K _central

2N2908

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.10. 2n2903.pdf Size:83K _central

2N2908

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.11. 2n2906_2n2907.pdf Size:96K _central

2N2908
2N2908

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.12. 2n2905a(to-39).pdf Size:229K _mcc

2N2908
2N2908

MCC TM Micro Commercial Components Ordering Information : Device Packing Part Number-BP Bulk;50pcs/Box ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any li

5.13. 2n2907_2n2907a(to-18).pdf Size:453K _mcc

2N2908
2N2908

MCC 2N2907 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2N2907A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.600mA) • Low voltage (max.60V) PNP Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol R

5.14. p2n2907a.pdf Size:162K _onsemi

2N2908
2N2908

P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25°C PD 625 mW Dera

5.15. 2n2907aub.pdf Size:242K _optek

2N2908
2N2908

Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

5.16. 2n2907aua.pdf Size:95K _optek

2N2908
2N2908

5.17. 2n2905.pdf Size:70K _advanced-semi

2N2908
2N2908

SILICON PNP TRANSISTOR DESCRIPTION: The 2N2905A is Designed for PACKAGE STYLE TO- 39 General Purpose Amplifier and Switching Applications MAXIMUM RATINGS I 600 mA V -60 V P 3.0 W @ T = 25 C T -65 C to +200 C 1= E I ER 2 = BASE T -65 C to +200 C 3 = C LLEC R ? 58 C/W ? ? ? 1. Y CHARACTERISTICS = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO I = 1 -6 V B

5.18. 2n2906_7.pdf Size:141K _cdil

2N2908
2N2908

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Conti

5.19. p2n2907_a.pdf Size:91K _cdil

2N2908
2N2908

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package E CB Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT VCEO Col

5.20. 2n2906a_07a.pdf Size:226K _cdil

2N2908
2N2908

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2906A, 07A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V Col

5.21. 2n2904_05.pdf Size:75K _cdil

2N2908
2N2908

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous

5.22. 2n2904a_05a.pdf Size:146K _cdil

2N2908
2N2908

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904A 2N2905A TO-39 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2904A, 05A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V Col

5.23. 2n2904u.pdf Size:51K _kec

2N2908
2N2908

SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Satura

5.24. 2n2906u.pdf Size:52K _kec

2N2908
2N2908

SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=-50nA(Max.), IBL=-50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=-30V, VEB=-3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Sa

5.25. 2n2904u1.pdf Size:51K _kec

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2N2908

SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 : ICEX=50nA(Max.), IBL=50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=30V, VEB=3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low Satur

5.26. 2n2904e.pdf Size:51K _kec

2N2908
2N2908

SEMICONDUCTOR 2N2904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=50nA(Max.), IBL=50nA(Max.) 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=30V, VEB=3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05 Low S

5.27. 2n2906e.pdf Size:50K _kec

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2N2908

SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=-30V, VEB=-3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05

5.28. 2n2907as.pdf Size:377K _first_silicon

2N2908
2N2908

SEMICONDUCTOR 2N2907AS TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which 3 is designed for low power surface mount applications. 2 Features 1 compliance with RoHS requirements. • We declare that the material of product SOT– 23 ORDERING INFORMATION †

5.29. 2n2907au.pdf Size:265K _first_silicon

2N2908
2N2908

SEMICONDUCTOR 2N2907AU TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-323/SC-70 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING IN

Datasheet: 2N2906CSM , 2N2907 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM , SS8550 , 2N2909 , 2N291 , 2N2910 , 2N2911 , 2N2912 , 2N2913 , 2N2913DCSM , 2N2914 .

 


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