BDS10-SM Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDS10-SM

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BDS10-SM transistor: TO252

BDS10-SM Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: BDP950 , BDP951 , BDP952 , BDP953 , BDP954 , BDP955 , BDP956 , BDS10 , 2SA1015 , BDS11 , BDS12 , BDS12-SM , BDS13 , BDS13-SM , BDS14 , BDS14-SM , BDS15 .

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