BDS12 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDS12

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BDS12 transistor: TO220

BDS12 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: BDP952 , BDP953 , BDP954 , BDP955 , BDP956 , BDS10 , BDS10-SM , BDS11 , BF199 , BDS12-SM , BDS13 , BDS13-SM , BDS14 , BDS14-SM , BDS15 , BDS15-SM , BDS16 .

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