2N2911 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2911

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 5

Maximum collector-base voltage |Ucb|, V: 150

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 0.5

Collector capacitance (Cc), pF: 200

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N2911 transistor: TO5

2N2911 Equivalent Transistors - Cross-Reference Search

2N2911 PDF document for downloads:

5.1. 2n2914_2n2916_2n2918.pdf Size:28K _semelab

2N2914 2N2916 SEME 2N2918 LAB MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN 7.75 (0.305) 8.51 (0.335) PLANAR TRANSISTORS IN TO77 PACKAGE 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2 1 45? 0.71 (0.028) 0.86 (0.034) TO–77 PACKAGE PIN 1 – Collector 1 PIN 4 – Emitter 2 PIN 2 – Base 1 PIN 5 – Base 2 PIN 3 – Emitter 1 PIN 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) EACH SIDE TOTAL DEVICE VCBO Collector – Base Voltage 45V VCEO Collector – Emitter Voltage 1 45V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 30 PD Total Device Dissipation TAMB = 25°C 300mW 500mW Derate above 25°C 1.72mW / °C 2.86W / °C PD Total Device Dissipation TC = 25°C 750mW 1.5W Derate above 25°C 4.3mW / °C 8.6mW / °C TSTG Storage Temperature Range –65 to 200°C TL Lead temperature (Soldering, 10 sec.) 300°C NOTES 1. B

5.2. 2n2919.pdf Size:28K _semelab

2N2919 SEME LAB MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN 7.75 (0.305) 8.51 (0.335) PLANAR TRANSISTORS IN TO77 PACKAGE 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2 1 45? 0.71 (0.028) 0.86 (0.034) TO–77 PACKAGE PIN 1 – Collector 1 PIN 4 – Emitter 2 PIN 2 – Base 1 PIN 5 – Base 2 PIN 3 – Emitter 1 PIN 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) EACH SIDE TOTAL DEVICE VCBO Collector – Base Voltage 60V VCEO Collector – Emitter Voltage 1 60V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 30 PD Total Device Dissipation TAMB = 25°C 300mW 500mW Derate above 25°C 1.72mW / °C 2.86W / °C PD Total Device Dissipation TC = 25°C 750mW 1.5W Derate above 25°C 4.3mW / °C 8.6mW / °C TSTG Storage Temperature Range –65 to 200°C TL Lead temperature (Soldering, 10 sec.) 300°C NOTES 1. Base – Emitter Di

5.3. 2n2913_2n2915_2n2917.pdf Size:29K _semelab

2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN 7.75 (0.305) 8.51 (0.335) PLANAR TRANSISTORS IN TO77 PACKAGE 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2 1 45? 0.71 (0.028) 0.86 (0.034) TO–77 PACKAGE PIN 1 – Collector 1 PIN 4 – Emitter 2 PIN 2 – Base 1 PIN 5 – Base 2 PIN 3 – Emitter 1 PIN 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) EACH SIDE TOTAL DEVICE VCBO Collector – Base Voltage 45V VCEO Collector – Emitter Voltage 1 45V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 30 PD Total Device Dissipation TAMB = 25°C 300mW 500mW Derate above 25°C 1.72mW / °C 2.86W / °C PD Total Device Dissipation TC = 25°C 750mW 1.5W Derate above 25°C 4.3mW / °C 8.6mW / °C TSTG Storage Temperature Range –65 to 200°C TL Lead temperature (Soldering, 10 sec.) 300°C NOTES 1. Base – Emitt

See also transistors datasheet: 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM , 2N2908 , 2N2909 , 2N291 , 2N2910 , 2N5133 , 2N2912 , 2N2913 , 2N2913DCSM , 2N2914 , 2N2914DCSM , 2N2915 , 2N2915A , 2N2915DCSM .

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