BDT29C Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDT29C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BDT29C transistor: TO220

BDT29C Equivalent Transistors - Cross-Reference Search

BDT29C PDF document for downloads:

5.1. bdt29_a_b_c.pdf Size:158K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C ·Complement to Type BDT30/A/B/C APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT29 80 BDT29A 100 VCBO Collector-Base Voltage V BDT29B 120 BDT29C 140 BDT29 40 BDT29A 60 VCEO Collector-Emitter Voltage V BDT29B 80 BDT29C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A IBB Base Current 0.4 A Collector Power Dissipation PC TC=25? 30 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resi

5.2. bdt29f_af_bf_cf_df.pdf Size:160K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF ·Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT29F 80 BDT29AF 100 VCBO Collector-Base BDT29BF 120 V Voltage BDT29CF 140 BDT29DF 160 BDT29F 40 BDT29AF 60 VCEO Collector-Emitter BDT29BF 80 V Voltage BDT29CF 100 BDT29DF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A IBB Base Current 0.4 A Collector Power Dissipation PC TC=25? 19 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg T

See also transistors datasheet: BDS29C-SM , BDT20 , BDT21 , BDT29 , BDT29A , BDT29AF , BDT29B , BDT29BF , 2N2222 , BDT29CF , BDT29DF , BDT29F , BDT30 , BDT30A , BDT30AF , BDT30B , BDT30BF .

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