BDT30DF Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDT30DF

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 14

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BDT30DF transistor: ISO220

BDT30DF Equivalent Transistors - Cross-Reference Search

BDT30DF PDF document for downloads:

5.1. bdt30_a_b_c.pdf Size:158K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/C APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT30 -80 BDT30A -100 VCBO Collector-Base Voltage V BDT30B -120 BDT30C -140 BDT30 -40 BDT30A -60 VCEO Collector-Emitter Voltage V BDT30B -80 BDT30C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IBB Base Current -0.4 A Collector Power Dissipation PC TC=25? 30 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX U

5.2. bdt30f_af_bf_cf_df.pdf Size:109K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF ·Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT30F -80 BDT30AF -100 VCBO Collector-Base BDT30BF -120 V Voltage BDT30CF -140 BDT30DF -160 BDT30F -40 BDT30AF -60 VCEO Collector-Emitter BDT30BF -80 V Voltage BDT30CF -100 BDT30DF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IBB Base Current -0.4 A Collector Power Dissipation PC TC=25? 19 W Tj Junction Temperature 150 ? Storage Ttemperature Range

See also transistors datasheet: BDT29F , BDT30 , BDT30A , BDT30AF , BDT30B , BDT30BF , BDT30C , BDT30CF , 2N3906 , BDT30F , BDT31 , BDT31A , BDT31AF , BDT31B , BDT31BF , BDT31C , BDT31CF .

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