BDT31A Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDT31A

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of BDT31A transistor: TO220

BDT31A Equivalent Transistors - Cross-Reference Search

BDT31A PDF document for downloads:

5.1. bdt31f_af_bf_cf_df.pdf Size:112K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF ·Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT31F 80 BDT31AF 100 VCBO Collector-Base BDT31BF 120 V Voltage BDT31CF 140 BDT31DF 160 BDT31F 40 BDT31AF 60 VCEO Collector-Emitter BDT31BF 80 V Voltage BDT31CF 100 BDT31DF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 22 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ?

5.2. bdt31-a-b-c.pdf Size:111K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT31 80 BDT 31A 100 VCBO Collector-Base Voltage V BDT 31B 120 BDT 31C 140 BDT31 40 BDT 31A 60 VCEO Collector-Emitter Voltage V BDT 31B 80 BDT 31C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to

5.3. bdt31_a_b_c.pdf Size:111K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT31 80 BDT 31A 100 VCBO Collector-Base Voltage V BDT 31B 120 BDT 31C 140 BDT31 40 BDT 31A 60 VCEO Collector-Emitter Voltage V BDT 31B 80 BDT 31C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to

See also transistors datasheet: BDT30AF , BDT30B , BDT30BF , BDT30C , BDT30CF , BDT30DF , BDT30F , BDT31 , 9013 , BDT31AF , BDT31B , BDT31BF , BDT31C , BDT31CF , BDT31DF , BDT31F , BDT32 .

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