BDT61BF Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDT61BF

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 17

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 1.5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BDT61BF transistor: ISO220

BDT61BF Equivalent Transistors - Cross-Reference Search

BDT61BF PDF document for downloads:

5.1. bdt61_a_b_c.pdf Size:302K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT61 60 BDT61A 80 VCBO Collector-Base V Voltage BDT61B 100 BDT61C 120 BDT61 60 BDT61A 80 VCEO Collector-Emitter V Voltage BDT61B 100 BDT61C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IBB Base Current 0.1 A Collector Power Dissipation 2 Ta=25? PC W Collector Power Dissipation 50 TC=25? Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL P

See also transistors datasheet: BDT60C , BDT60CF , BDT60F , BDT60L , BDT61 , BDT61A , BDT61AF , BDT61B , OC44 , BDT61C , BDT61CF , BDT61F , BDT61L , BDT62 , BDT62A , BDT62AF , BDT62B .

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