BDT91 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDT91

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of BDT91 transistor: TO220

BDT91 Equivalent Transistors - Cross-Reference Search

BDT91 PDF document for downloads:

1.1. bdt91_93_95.pdf Size:157K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96 APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT91 60 VCBO Collector-Base Voltage BDT93 80 V BDT95 100 BDT91 60 VCEO Collector-Emitter Voltage BDT93 80 V BDT95 100 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.4 ?/W Rth j-c Thermal Resistance,Jun

1.2. bdt91f_93f_95f.pdf Size:152K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDT91F/93F/95F DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F; 100V(Min)- BDT95F ·Complement to Type BDT92F/94F/96F APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDT91F 60 VCBO Collector-Base Voltage BDT93F 80 V BDT95F 100 BDT91F 60 VCEO Collector-Emitter Voltage BDT93F 80 V BDT95F 100 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 32 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 6.4 ?/W Rth j-c isc Web

See also transistors datasheet: BDT85 , BDT85F , BDT86 , BDT86F , BDT87 , BDT87F , BDT88 , BDT88F , 2N2219 , BDT91F , BDT92 , BDT92F , BDT93 , BDT93F , BDT94 , BDT94F , BDT95 .

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