BDV65B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDV65B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 125

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 2000

Noise Figure, dB: -

Package of BDV65B transistor: TO218

BDV65B Equivalent Transistors - Cross-Reference Search

BDV65B PDF document for downloads:

1.1. bdv64b_bdv65b.pdf Size:110K _motorola

Order this document MOTOROLA by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP Complementary Silicon Plastic BDV64B Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applica- tions. DARLINGTONS • High DC Current Gain 10 AMPERES HFE = 1000 (min.) @ 5 Adc IIIIIIIIIIIIIIIIIIIIIII COMPLEMENTARY • Monolithic Construction with Built–in Base Emitter Shunt Resistors SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIII III POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III MAXIMUM RATINGS 60–80–100–120 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III IIIII III Rating Symbol Value Unit 125 WATTS IIIIIIIIIIII III IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII IIIII III IIIII III IIIII III Collector–Emitter Voltage VCEO IIIIIIVdc 100 IIIIIIIIIIII IIIIII IIIII III II

5.1. bdv64_bdv65.pdf Size:170K _mospec

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5.2. bdv65_65a_65b_65c.pdf Size:122K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type BDV64/64A/64B/64C Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV65/65A/65B/65C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25Ўж ) SYMBOL PARAMETER BDV65 BDV65A BDV65B VCBO Collector-base voltage ANG INCH VCEO Collector-emitter voltage VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current BDV65C BDV65 BDV65A SEM E Open emitter DUC ICON CONDITIONS VALUE 60 TOR 80 60 80 UNIT V 100 120 Open base BDV65B BDV65C Open collector 100 120 5 12 15 0.5 TC=25Ўж 125 V V A A A W Collector power dissipation Ta=25Ўж Junction temperature Storage temperature 3.5

5.3. bdv65_a_b_c.pdf Size:279K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type BDV64/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDV65 60 BDV65A 80 Collector-Base VCBO V Voltage BDV65B 100 BDV65C 120 BDV65 60 BDV65A 80 VCEO Collector-Emitter V Voltage BDV65B 100 BDV65C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IBB Base Current-Continuous 0.5 A Collector Power Dissipation 125 @ TC=25? PC W Collector Power Dissipation 3.5 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Cas

See also transistors datasheet: BDV49 , BDV50 , BDV64 , BDV64A , BDV64B , BDV64C , BDV65 , BDV65A , BF199 , BDV65C , BDV66 , BDV66A , BDV66B , BDV66C , BDV66D , BDV67 , BDV67A .

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