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BDV94 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDV94

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of BDV94 transistor: TOP3

BDV94 Equivalent Transistors - Cross-Reference Search

BDV94 PDF document for downloads:

1.1. bdv92_bdv94_bdv96.pdf Size:105K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95 APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDV92 -60 Collector-Emitter VCER BDV94 -80 V Voltage BDV96 -100 BDV92 -60 VCEO Collector-Emitter BDV94 -80 V Voltage BDV96 -100 VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IBB Base Current -7 A IE Emitter Current -14 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 ?/W Rth

See also transistors datasheet: BDV67 , BDV67A , BDV67B , BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , AC127 , BDV95 , BDV96 , BDW10 , BDW10A , BDW12 , BDW12A , BDW14 , BDW14A .

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