BDW53B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDW53B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BDW53B transistor: TO220

BDW53B Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: BDW51A , BDW51B , BDW51C , BDW52 , BDW52A , BDW52C , BDW53 , BDW53A , 2N222 , BDW53C , BDW53D , BDW54 , BDW54A , BDW54B , BDW54C , BDW55 , BDW56 .

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