BDX16 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDX16

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of BDX16 transistor: TO3

BDX16 Equivalent Transistors - Cross-Reference Search

BDX16 PDF document for downloads:

1.1. bdx16.pdf Size:315K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX16 DESCRIPTION ·Contunuous Collector Current-IC= -3A ·Collector Power Dissipation- : PC= 25W @TC= 25? Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCER Collector-Emitter Voltage RBE= 100? -150 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -4 A IBB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25? 25 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 7.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn

See also transistors datasheet: BDX12 , BDX13 , BDX13-4 , BDX13-5 , BDX13-6 , BDX13-7 , BDX14 , BDX15 , BD139 , BDX18 , BDX18N , BDX20 , BDX22 , BDX22-4 , BDX22-5 , BDX22-6 , BDX22-7 .

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