BDX54B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDX54B

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 60

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 20

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BDX54B transistor: TO220

BDX54B Equivalent Transistors - Cross-Reference Search

BDX54B PDF document for downloads:

5.1. bdx53b_bdx54.pdf Size:169K _motorola

Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc BDX54C VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc DARLINGTON VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc 8 AMPERE • Monolithic Construction with Built–In Base–Emitter Shunt Resistors COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII • TO–220AB Compact Package SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII POWER TRANSISTORS MAXIMUM RATINGS 80–100 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIII IIII III IIII IIII IIII IIII 65 WATTS BDX53B BDX53C IIIIIIIIIIIIIIIIIIIIIII

5.2. bdx54a.pdf Size:41K _fairchild_semi

BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BDX54 - 45 V : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V VCEO Collector-Emitter Voltage : BDX54 - 45 V : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 8 A ICP *Collector Current (Pulse) - 12 A IB Base Current - 0.2 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BDX54 IC = - 100mA, IB = 0 - 45

5.3. bdx53_bdx54.pdf Size:187K _mospec

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5.4. bdx54f.pdf Size:103K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX54F DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain- : hFE= 500(Min)@ IC= -2A ·Complement to Type BDX53F APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IBB Base Current-Continuous -0.2 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.08 ?/W Rth j-c Thermal Resistance, Junction to Ambient 70 ?/W Rth j-a isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Po

5.5. bdx54_a_b_c.pdf Size:120K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Complement to type BDX53/A/B/C APPLICATIONS Ў¤ Power linear and switching applications Ў¤ Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX54/A/B/C Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS BDX54 BDX54A BDX54B VCBO Collector-base voltage VCEO HAN INC Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current SEM GE BDX54C BDX54 BDX54A Open base BDX54B BDX54C Open emitter ICON DUC VALUE -45 -60 -80 TOR UNIT V -100 -45 -60 V -80 -100 VEBO IC ICM IB PC Tj Tstg Open collector -5 -8 -12 -0.2 V A A A W Ўж Ўж Collector power dissipation Junction temperature Storage temperature TC=25Ўж 60 150 -65~15

See also transistors datasheet: BDX53D , BDX53E , BDX53F , BDX53H , BDX53S , BDX54 , BDX54A , BDX54AFI , BC237 , BDX54BFI , BDX54C , BDX54CFI , BDX54D , BDX54E , BDX54F , BDX54H , BDX54S .

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