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BDX68C Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDX68C

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 25

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 1

Noise Figure, dB: -

Package of BDX68C transistor: TO3

BDX68C Equivalent Transistors - Cross-Reference Search

BDX68C PDF document for downloads:

5.1. bdx68_a_b_c.pdf Size:266K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX68/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -20A ·Low Saturation Voltage ·Complement to Type BDX69/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDX68 -80 BDX68A -100 VCBO Collector-Base Voltage V BDX68B -120 BDX68C -140 BDX68 -60 BDX68A -80 VCEO Collector-Emitter Voltage V BDX68B -100 BDX68C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IBB Base Current -500 mA Collector Power Dissipation PC @ TC=25? 150 W TJ Junction Temperature 200 ? Storage Temperature Range -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 0.875 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCH

See also transistors datasheet: BDX67 , BDX67A , BDX67B , BDX67C , BDX67L , BDX68 , BDX68A , BDX68B , MJE13003 , BDX69 , BDX69A , BDX69B , BDX69C , BDX70 , BDX71 , BDX72 , BDX73 .

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