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BDX86B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDX86B

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BDX86B transistor: TO3

BDX86B Equivalent Transistors - Cross-Reference Search

BDX86B PDF document for downloads:

5.1. bdx86_a_b_c.pdf Size:269K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX86/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C ·Complement to Type BDX85/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDX86 -45 BDX86A -60 VCBO Collector-Base Voltage V BDX86B -80 BDX86C -100 BDX86 -45 BDX86A -60 VCEO Collector-Emitter Voltage V BDX86B -80 BDX86C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IBB Base Current -100 mA Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 200 ? Storage Temperature Range -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction

See also transistors datasheet: BDX84B , BDX84C , BDX85 , BDX85A , BDX85B , BDX85C , BDX86 , BDX86A , BC158 , BDX86C , BDX87 , BDX87A , BDX87B , BDX87C , BDX88 , BDX88A , BDX88B .

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