BDX87B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDX87B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 117

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BDX87B transistor: TO3

BDX87B Equivalent Transistors - Cross-Reference Search

BDX87B PDF document for downloads:

5.1. bdx87-88.pdf Size:70K _st

BDX87C BDX88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. 1 The complementary PNP types is the BDX88C. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R Typ. = 6 K ? R Typ. = 55 ? 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDX87C PNP BDX88C VCBO Collector-base Voltage (IE = 0) 100 V VCEO Collector-emitter Voltage (IB = 0) 100 V VEBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 12 A I Collector Peak Current (repetitive) 18 A CM IB Base Current 0.2 A Ptot Total Dissipation at Tc ? 25 oC 120 W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 June 1997 BDX87C-BDX88C THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.45 C

5.2. bdx87_a_b_c.pdf Size:214K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C ·Complement to Type BDX88/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT BDX87 45 BDX87A 60 VCBO Collector-Base Voltage V BDX87B 80 BDX87C 100 BDX87 45 BDX87A 60 VCEO Collector-Emitter Voltage V BDX87B 80 BDX87C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 18 A IBB Base Current 200 mA Collector Power Dissipation PC @ TC=25? 120 W TJ Junction Temperature 200 ? Storage Temperature Range -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.45 ?/W

5.3. bdx87c.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX87C DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type BDX88C Ў¤ DARLINGTON APPLICATIONS Ў¤ Designed for use in power linear and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation SEM GE TC=25Ўж Open emitter Open base OND IC CONDITIONS TOR UC VALUE 100 100 5 12 18 0.2 120 200 -65~200 Ўж Ўж UNIT V V V A A A W Open collector Max. operating Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.45 UNIT Ўж /W

See also transistors datasheet: BDX85B , BDX85C , BDX86 , BDX86A , BDX86B , BDX86C , BDX87 , BDX87A , BC548B , BDX87C , BDX88 , BDX88A , BDX88B , BDX88C , BDX91 , BDX92 , BDX93 .

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