BDY27C Transistor Datasheet. Parameters and Characteristics.

Type Designator: BDY27C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 87

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 75

Noise Figure, dB: -

Package of BDY27C transistor: TO3

BDY27C Equivalent Transistors - Cross-Reference Search

BDY27C PDF document for downloads:

5.1. bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf Size:258K _comset

COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY26, 183T2 180 VCEO Collector-Emitter Voltage BDY27, 184T2 200 V BDY28, 185T2 250 BDY26, 183T2 300 VCBO Collector-Base Voltage BDY27, 184T2 400 V BDY28, 185T2 500 BDY26, 183T2 VEBO Emitter-Base Voltage BDY27, 184T2 10 V BDY28, 185T2 BDY26, 183T2 IC Collector Current BDY27, 184T2 6 A BDY28, 185T2 BDY26, 183T2 IB Base Current BDY27, 184T2 3 A BDY28, 185T2 BDY26, 183T2 PTOT Power Dissipation @ TC = 25° BDY27, 184T2 87.5 Watts BDY28, 185T2 TJ Junction Temperature BDY26, 183T2 BDY27, 184T2 -65 to +200 °C BDY28, 185T2 TS Storage Temperature Page 1 of 4 COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 THERMAL CHARACTERISTICS Symbol Ratings Value Unit BDY26, 183T2 RthJ-C Thermal Resistance, Junction to Case BDY27, 184T2

5.2. bdy27.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY27 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed APPLICATIONS ·Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IBB Base Current 3 A PC Collector Power Dissipation@TC=25? 87.5 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.0 ?/W Rth j-c isc Website:www.iscsemi.cn 1 www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDY27 ELECTRICAL CHARACTERISTICS TC=25? unless

See also transistors datasheet: BDY25C , BDY26 , BDY26A , BDY26B , BDY26C , BDY27 , BDY27A , BDY27B , SS8050 , BDY28 , BDY28A , BDY28B , BDY28C , BDY29 , BDY34 , BDY37 , BDY37A .

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