BF257 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF257

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 55

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BF257 transistor: TO39

BF257 Equivalent Transistors - Cross-Reference Search

BF257 PDF document for downloads:

1.1. bf257_bf258_bf259.pdf Size:83K _st

BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case.They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BF257 BF258 BF259 VCBO Collector-base Voltage (IE = 0) 160 250 300 V VCEO Collector-emitter Voltage (IB = 0) 160 250 300 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 100 mA ICM Collector Peak Current 200 mA Pt ot Total Power Dissipation at Tamb ? 50 °C5 W Tstg Storage Temperature – 55 to 200 °C Tj Junction Temperature 200 °C October 1988 1/5 BF257-BF258-BF259 THERMAL DATA Rth j-case Thermal Resistance Junction-case Max 30 °C/W Rth j-amb Thermal Resistance Junction-ambient Max 175 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

1.2. bf257-bf258-bf259.pdf Size:83K _st

BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case.They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BF257 BF258 BF259 VCBO Collector-base Voltage (IE = 0) 160 250 300 V VCEO Collector-emitter Voltage (IB = 0) 160 250 300 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 100 mA ICM Collector Peak Current 200 mA Pt ot Total Power Dissipation at Tamb ? 50 °C5 W Tstg Storage Temperature – 55 to 200 °C Tj Junction Temperature 200 °C October 1988 1/5 BF257-BF258-BF259 THERMAL DATA Rth j-case Thermal Resistance Junction-case Max 30 °C/W Rth j-amb Thermal Resistance Junction-ambient Max 175 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

1.3. kf124_kf125_bf167_bf173_bf257_bf258_bf259_kf422_bf457_bf458_bf459_kf469_kf503_kf504_kf506_kf507_kf508-a_kf509_kf524_kf525_ks500_sf240_sf245_sf357_sf358_sf359_kf589_kf590.pdf Size:132K _tesla

See also transistors datasheet: BF254-3 , BF254-4 , BF254B , BF255 , BF255-2 , BF255-3 , BF255C , BF255D , 2N5551 , BF257A , BF257B , BF257C , BF257CSM , BF257D , BF257G , BF257N , BF257S .

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